Porous oxide semiconductor particles
AssigneesKabushiki Kaisha Toyota Chuo Kenkyusho, Toyota Jidosha Kabushiki Kaisha
InventorsMasanori Inaba, Kazuhisa Yano, Tomohiro Takeshita, Kensaku Kodama, Toshiyuki Suzuki
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Abstract
Porous oxide semiconductor particles have a connected structure in which porous primary particles having an aggregate of crystallites composed of an oxide semiconductor are connected to each other and have a specific surface area of 60 m2/g or more. The porous oxide semiconductor particles have preferably a pore diameter of 1 nm or more and 20 nm or less. The porous oxide semiconductor particles have preferably a tap density of 0.005 g/cm3 or more and 1.0 g/cm3 or less. The oxide semiconductor is preferably SnO2 or SnO2 doped with at least one element selected from the group consisting of Nb, Sb, W, Ta, and Al.
Claims9
Porous oxide semiconductor particles comprising a connected structure in which porous primary particles are connected to each other, wherein:
- a specific surface area of the porous oxide semiconductor particles is 60 m2/g or more,
- an average crystallite diameter of the porous oxide semiconductor particles is 2 nm or more and 8.1 nm or less, and
- each of the porous primary particles comprises an aggregate of crystallites composed of an oxide semiconductor.
Dependencies are inferred from the claim text.