Semiconductor device comprising different types of microelectromechanical systems devices

A semiconductor device, comprising:

• an interconnect structure disposed over a semiconductor substrate;
• a dielectric structure disposed over the interconnect structure;
• a first cavity disposed in the dielectric structure;
• a second cavity disposed in the dielectric structure and laterally spaced from the first cavity;
• a microelectromechanical system (MEMS) substrate disposed over the dielectric structure, wherein the MEMS substrate comprises a first movable membrane overlying the first cavity and a second movable membrane overlying the second cavity;
• a sensing structure overlying the first movable membrane and the first cavity, wherein a physical property of the sensing structure changes in response to an external stimulus;
• and
• a passivation layer disposed over the MEMS substrate, wherein the sensing structure vertically separates a first bottom surface of the passivation layer from an upper surface of the first movable membrane, wherein a second bottom surface of the passivation layer overlies the second movable membrane and is disposed vertically between the first bottom surface and the upper surface of the first movable membrane, wherein the passivation layer directly contacts an upper surface of the sensing structure and an upper surface of the second movable membrane.