Integrated chip with solid-state power storage device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi Ching Ong, Kuen-Yi Chen, Yi-Hsuan Chen, Kuo-Ching Huang, Harry-Hak-Lay Chuang
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to an integrated chip including a first metal layer over a substrate. A second metal layer is over the first metal layer. An ionic crystal layer is between the first metal layer and the second metal layer. A metal oxide layer is between the first metal layer and the second metal layer. The first metal layer, the second metal layer, the ionic crystal layer, and the metal oxide layer are over a transistor device that is arranged along the substrate.
Claims20
A method for forming an integrated chip, the method comprising:
- depositing a first metal layer over a transistor device that is arranged along a substrate;
- exposing the first metal layer to air to form a metal oxide layer along a top surface of the first metal layer;
- exposing the metal oxide layer to water to form a hydrous metal oxide layer along a top surface of the metal oxide layer;
- depositing an ionic crystal layer over the hydrous metal oxide layer;
- and
- depositing a second metal layer over the ionic crystal layer.
A method for forming an integrated chip, the method comprising:
- depositing a first dielectric layer over a transistor device that is arranged along a semiconductor substrate;
- depositing a first metal layer comprising a first metal over the first dielectric layer;
- providing oxygen to a top surface of the first metal layer to form a metal oxide layer comprising the first metal along the top surface of the first metal layer;
- providing water to a top surface of the metal oxide layer to form a hydrous metal oxide layer comprising the first metal along the top surface of the metal oxide layer;
- depositing an ionic crystal layer comprising a second metal, different than the first metal, over the hydrous metal oxide layer;
- and
- depositing a second metal layer over the ionic crystal layer.
A method for forming an integrated chip, the method comprising:
- depositing a first metal layer over a transistor device that is arranged along a substrate;
- exposing the first metal layer to air to form a metal oxide layer along a top surface of the first metal layer;
- exposing the metal oxide layer to water to form a hydrous metal oxide layer along a top surface of the metal oxide layer;
- depositing a dielectric layer on a top surface of the hydrous metal oxide layer;
- depositing an ionic crystal layer over the hydrous metal oxide layer and on a top surface of the dielectric layer;
- and
- depositing a second metal layer over the ionic crystal layer.
Dependencies are inferred from the claim text.