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US 12,302,625 B2Granted
Electronic device comprising two high electron mobility transistors
AssigneesSTMicroelectronics France, STMicroelectronics International N.V.
InventorsMatthieu Nongaillard, Thomas Oheix
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Abstract
The disclosure concerns an electronic device provided with two high electron mobility transistors stacked on each other and having in common their source, drain, and gate electrodes. For example, each of these electrodes extends perpendicularly to the two transistors. For example, the source and drain electrodes electrically contact the conduction channels of each of the transistors so that said channels are electrically connected in parallel.
Claims20
An electronic device, comprising:
- a first high electron mobility (HEMT) transistor;
- and
- a second HEMT transistor,
- wherein the first HEMT transistor includes a first stack of layers extending from an insulating layer toward a first side of the electronic device, and the second HEMT transistor includes a second stack of layers extending from the insulating layer toward a second side of the electronic device that is opposite to the first side, the first stack of layers and the second stack of layers each including, from the insulating layer, a barrier layer and a channel layer capable of forming a conduction region of a two-dimensional electron gas;
- and
- wherein the first and second HEMT transistors have in common a source electrode, a drain electrode, and a gate electrode.
3 more elements
A structure, comprising:
- a dielectric layer;
- a first stack of layers on a first side of the dielectric layer, the first stack of layers including a first III-V semiconductor layer and a second III-V semiconductor layer, the first III-V semiconductor layer closer to the first side of the dielectric layer than the second III-V semiconductor layer;
- a second stack of layers on a second side of the dielectric layer opposite to the first side, the second stack of layers including a third III-V semiconductor layer and a fourth III-V semiconductor layer, the third III-V semiconductor layer closer to the second side of the dielectric layer than the fourth III-V semiconductor layer;
- and
- a first electrode in contact with both the second III-V semiconductor layer and the fourth III-V semiconductor layer.
2 more elements
A device, comprising
- a first body;
- and
- a second body, each of the first body and the second body including:
- a stack of layers including an insulating layer having a first surface and a second surface opposite to the first surface, a first layer of a first III-V semiconductor material on the second surface of the insulating layer, and a second layer of a second III-V semiconductor material on the first layer;
- and
- an electrode extending from the first surface of the insulating layer to the second layer of the second III-V semiconductor material,
- the first surface of the insulating layer of the first body being bonded to the first surface of the insulating layer of the second body,
- the electrode of the first body being aligned with the electrode of the second body.
5 more elements
Dependencies are inferred from the claim text.