Techniques for adding compensating material(s) in semiconductor devices

A semiconductor device comprising:

• a body;
• the body having one or more layers of semiconductor material collectively presenting a first value of a temperature-dependent parameter;
• a trench or a slot defined within an opening in a planar surface presented by at least one layer of the one or more layers of the semiconductor material;
• one or more compensating materials substantially filling the trench or slot, the one or more compensating materials collectively presenting a second value of the temperature-dependent parameter;
• the body having a temperature-dependent characteristic dependent on each of the first value and the second value;
• the semiconductor device being manufactured according to a fabrication process that produces an outer surface of the one or more compensating materials within the trench or slot wherein the outer surface is substantially coplanar with the planar surface;
• and
• a continuous layer of conductive material deposited over the one or more layers and the one or more compensating materials within the trench, so as to cap the one or more compensating materials within the trench or slot;
• wherein:
• the semiconductor device comprises a resonator;
• the body comprises a first beam and a second being that are configured to vibrate, during operation of the resonator;
• the trench or slot is a first trench or slot, and is defined in the first beam;
• the second beam comprises a second trench or a slot, defined within at least one layer of the one or more layers of the semiconductor material of the second body, the second beam also having the one or more compensating materials in a manner which substantially fill the second trench or slot;
• and
• the temperature-dependent characteristic is also dependent on a value of the temperature-dependent parameter for the one or more compensating materials which substantially fill the second trench or slot.

A semiconductor device comprising:

• a microelectromechanical systems (MEMS) structure having a body that is to vibrate or deflect during operation of the semiconductor device;
• the body having one or more layers of semiconductor material collectively presenting a first value of parameter dependent on a temperature coefficient of Young's Modulus (TCE);
• a trench or a slot defined within an opening in a planar surface presented by at least one layer of the one or more layers of the semiconductor material;
• one or more compensating materials substantially filling the trench or slot, the one or more compensating materials collectively presenting a second value of the TCE-dependent parameter;
• the body having an overall temperature coefficient of frequency (TCF) that is dependent on each of the first value and the second value;
• the semiconductor device being manufactured according to a fabrication process that produces an outer surface of the one or more compensating materials within the trench or slot wherein the outer surface is substantially coplanar with the planar surface;
• and
• a continuous layer of conductive material deposited over the one or more layers and the one or more compensating materials within the trench, so as to cap the one or more compensating materials within the trench or slot;
• wherein:
• the body defines a beam having a swinging end which is operable to deflect or move during operation of the semiconductor device;
• and
• the swinging end is substantially encased in the conductive material.

A semiconductor device comprising:

• a microelectromechanical systems (MEMS) structure having a body that is to vibrate or deflect during operation of the semiconductor device;
• the body having one or more layers of semiconductor material collectively presenting a first value of parameter dependent on a temperature coefficient of Young's Modulus (TCE);
• a trench or a slot defined within an opening in a planar surface presented by at least one layer of the one or more layers of the semiconductor material;
• one or more compensating materials substantially filling the trench or slot, the one or more compensating materials collectively presenting a second value of the TCE-dependent parameter;
• the body having an overall temperature coefficient of frequency (TCF) that is dependent on each of the first value and the second value;
• the semiconductor device being manufactured according to a fabrication process that produces an outer surface of the one or more compensating materials within the trench or slot wherein the outer surface is substantially coplanar with the planar surface;
• and
• a continuous layer of conductive material deposited over the one or more layers and the one or more compensating materials within the trench, so as to cap the one or more compensating materials within the trench or slot
• wherein:
• the semiconductor device comprises a resonator;
• the body comprises a first beam and a second being that are configured to vibrate, during operation of the resonator;
• the trench or slot is a first trench or slot, and is defined in the first beam;
• the second beam comprises a second trench or a slot, defined within at least one layer of the one or more layers of the semiconductor material of the second body, the second beam also having the one or more compensating materials which substantially fill the second trench or slot;
• and
• the temperature-dependent characteristic is also dependent on a value of the temperature-dependent parameter for the one or more compensating materials which substantially fill the second trench or slot.

An integrated circuit comprising:

• a timing signal generator having a microelectromechanical systems (MEMS) resonator, the MEMS resonator having a body that is to vibrate at a resonant frequency during operation of the integrated circuit;
• the body comprising at least two beams and an anchor;
• each of the beams having one or more layers of semiconductor material collectively presenting a first value of a coefficient of Young's Modulus (TCE);
• for each of the beams:
• a trench or a slot defined within an opening in a planar surface presented by at least one layer of the one or more layers of the semiconductor material;
• and
• one or more compensating materials deposited to fill the trench or slot, the one or more compensating materials collectively presenting a second value of the TCE;
• the body having a temperature-dependent characteristic dependent on each of the first value and the second value of each of the beams;
• and
• circuitry to output a timing signal dependent on a sensed resonant frequency of vibration of the MEMS resonator;
• an outer surface of the one or more compensating materials within each trench or slot that is substantially coplanar with the planar surface of the respective trench or slot;
• and
• a continuous layer of conductive material deposited over the one or more layers and the one or more compensating materials within the trench, so as to cap the one or more compensating materials within the trench or slot.