Transformer for low loss and apparatus including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKihyun Kim, Sangho Lee, Jinhyun Kim, Hyunchul Park
Life of this patent
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Abstract
The disclosure relates to a pre-5th-Generation (5G) or 5G communication system to be provided for supporting higher data rates Beyond 4th-Generation (4G) communication system, such as long term evolution (LTE). A transformer is provided. The transformer includes a first primary inductor, a second primary inductor, and a secondary inductor. The secondary inductor may be disposed between the first primary inductor and the second primary inductor. The secondary inductor may be disposed spaced apart from the first primary inductor and the second primary inductor.
Claims16
A transformer comprising:
- a first primary inductor;
- a second primary inductor;
- a secondary inductor;
- and
- a power amplifier coupled with the secondary inductor,
- wherein the secondary inductor is disposed between the first primary inductor and the second primary inductor,
- wherein the secondary inductor is disposed apart from the first primary inductor and the second primary inductor,
- wherein a first parasitic capacitor is formed by the first primary inductor and the secondary inductor,
- wherein a second parasitic capacitor is formed by the second primary inductor and the secondary inductor, and
- wherein the second parasitic capacitor is impedance-matched with an equivalent capacitor of the power amplifier.
An electronic device in a wireless communication system, the electronic device comprising:
- a plurality of radio frequency integrated circuits (RFICs),
- wherein at least one RFIC among the plurality of RFICs includes a transformer,
- wherein the transformer includes a first primary inductor, a second primary inductor, a secondary inductor, and a power amplifier coupled with the secondary inductor,
- wherein the secondary inductor is disposed between the first primary inductor and the second primary inductor,
- wherein the secondary inductor is disposed apart from the first primary inductor
- and the second primary inductor,
- wherein a first parasitic capacitor is formed by the first primary inductor and the secondary inductor,
- wherein a second parasitic capacitor is formed by the second primary inductor and the secondary inductor, and
- wherein the second parasitic capacitor is impedance-matched with an equivalent capacitor of the power amplifier.
Dependencies are inferred from the claim text.