Wafer-level etched facet for perpendicular coupling of light from a semiconductor laser device

A semiconductor laser device, comprising:

• a substrate having a first facet;
• a guiding layer having a second facet through which output light is configured to be emitted, wherein the output light is arranged to pass over the first facet;
• a bottom dielectric layer between the substrate and the guiding layer;
• and
• a top dielectric layer on the guiding layer;
• and
• wherein the second facet is at an angle relative to the first facet.

A semiconductor laser device, comprising:

• a platform comprising:
• a substrate having a first facet;
• a guiding layer having a waveguide and a second facet through which an output light is configured to be emitted from the waveguide, wherein the second facet is at an angle relative to the first facet, wherein the angle is between 2° and 30°;
• a bottom dielectric layer between the substrate and the guiding layer;
• a top dielectric layer on the guiding layer;
• and
• walls forming a recess in the platform;
• and
• a gain chip bonded to the platform in the recess, the gain chip comprising a third facet, wherein:
• the gain chip is optically end coupled with the guiding layer of the platform;
• and
• the third facet is angled with respect to a propagation direction of the waveguide in the guiding layer.