Structure and formation method of semiconductor device with carbon-containing conductive structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Hao Liao, Hsi-Wen Tien, Yu-Teng Dai, Chih-Wei Lu, Hsin-Chieh Yao, Hwei-Jay Chu
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Abstract
A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a conductive line over the substrate. The semiconductor device structure also includes a catalyst structure over the conductive line and a carbon-containing conductive via directly on the catalyst structure. The semiconductor device structure further includes a dielectric layer surrounding the carbon-containing conductive via.
Claims20
A semiconductor device structure, comprising:
- a substrate;
- a conductive line over the substrate;
- a catalyst structure over the conductive line;
- a carbon-containing conductive via on the catalyst structure;
- a first dielectric layer surrounding the carbon-containing conductive via;
- a second dielectric layer between the first dielectric layer and the substrate, wherein the second dielectric layer surrounds the conductive line;
- and
- an enclosed hole surrounded by the carbon-containing conductive via, the conductive line, and the second dielectric layer.
A semiconductor device structure, comprising:
- a substrate;
- a first conductive structure over the substrate;
- a catalyst structure over the first conductive structure;
- a second conductive structure over the catalyst structure, wherein the second conductive structure has a greater atomic concentration of carbon than that of the first conductive structure;
- a dielectric layer surrounding the second conductive structure;
- and
- an enclosed hole surrounded by the second conductive structure and the first conductive structure.
A method for forming a semiconductor device structure, comprising:
- forming a conductive layer over a substrate;
- forming a catalyst layer over the conductive layer;
- partially removing the conductive layer and the catalyst layer such that a remaining portion of the conductive layer forms a conductive line, and a remaining portion of the catalyst layer forms a catalyst structure over the conductive line;
- forming a first dielectric layer over the conductive line and the catalyst structure to cover the catalyst structure;
- partially removing the first dielectric layer to form a via hole exposing a portion of the catalyst structure that is previously covered by the first dielectric layer;
- and
- growing a carbon-containing conductive via on the catalyst structure exposed by the via hole, wherein the via hole exposes a side surface of the catalyst structure and a side surface of the conductive line before the growth of the carbon-containing conductive via.
Dependencies are inferred from the claim text.