Method for manufacturing semiconductor device
AssigneeTokyo Electron Limited
InventorsChun-Huai Li, Chi-Wen Chen
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Abstract
A method for manufacturing a semiconductor device includes the following steps. A channel layer and a barrier layer are sequentially formed on a substrate by an epitaxial process to form a semiconductor device. The channel layer includes a first III-V compound and the barrier layer includes a second III-V compound. The semiconductor device is disposed within a cavity. A high-pressure fluid is introduced into the cavity to perform a passivation treatment on defects of the semiconductor device with the high-pressure fluid. The high-pressure fluid is doped with a compound composed of at least one of nitrogen, oxygen, and fluorine.
Claims19
A method for manufacturing a semiconductor device, comprising:
- forming a channel layer and a barrier layer on a substrate, sequentially, by an epitaxial process to form the semiconductor device, wherein the channel layer includes a first III-V compound and the barrier layer includes a second III-V compound;
- disposing the semiconductor device within a cavity;
- and
- introducing a high-pressure fluid into the cavity to perform a passivation treatment on defects of the semiconductor device with the high-pressure fluid;
- wherein the high-pressure fluid is doped with a compound composed of at least one of nitrogen, oxygen, and fluorine.
Dependencies are inferred from the claim text.