MEMS display device with an etch-stop-layer

A method for manufacturing a Micro-Electro-Mechanical Systems (MEMS) device on a substrate, the method comprising:

• forming an electronic circuit on the substrate;
• forming an insulating layer on the substrate;
• forming a via comprising a through-hole extending through the insulating layer and filled with an electrically-conductive material that is electrically connected to the electronic circuit;
• forming a first electrode connected to the via on the insulating layer, wherein an upper surface of the first electrode is aligned with an upper surface of the insulating layer;
• forming a second electrode on the insulating layer, wherein an upper surface of the second electrode is aligned with the upper surface of the insulating layer;
• forming an etch stop layer on the insulating layer, the etch stop layer made of at least one of Aluminum nitride or Aluminum oxide;
• forming a vertical hinge connected to the second electrode, wherein the vertical hinge is connected to the second electrode by a conductive support that is mounted to the second electrode and extends beyond the upper surface of the insulating layer and an upper surface of the etch stop layer, and wherein the conductive support is formed of the same material as the second electrode;
• forming a sacrificial layer on the insulating layer;
• forming a movable element connected to the vertical hinge;
• and
• removing the sacrificial layer by hydrofluoric acid vapor,
• wherein the etch stop layer is formed after forming the first electrode such that the etch stop layer is between the movable element and the first electrode, and the etch stop layer is planarized on the upper surface of the insulating layer and the upper surface of the first electrode.