Method for producing a nanoscale channel structure
AssigneeRobert Bosch GmbH
InventorChristoph Schelling
Life of this patent
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Abstract
A method for producing a nanoscale channel structure disclosed. The method includes depositing and structuring a first sacrificial layer on a substrate, depositing a second sacrificial layer on the substrate and on the first sacrificial layer, depositing an etching masking layer on the second sacrificial layer, partly removing the etching masking layer and the second sacrificial layer, removing the first sacrificial layer and additionally partly removing the second sacrificial layer, depositing a wall layer on the etching masking layer and on the substrate, structuring access openings to the second sacrificial layer, and removing the remaining second sacrificial layer.
Claims11
A method for producing a nanoscale channel structure, comprising:
- depositing and structuring a first sacrificial layer on a substrate;
- depositing a second sacrificial layer on the substrate and on the first sacrificial layer;
- depositing an etch masking layer on the second sacrificial layer;
- partially removing the etch masking layer and a first portion of the second sacrificial layer;
- after partially removing the etch masking layer and the first portion, removing the first sacrificial layer and further partially removing a second portion of the second sacrificial layer;
- depositing a wall layer on the partially removed etch masking layer and on the substrate;
- structuring access openings to access the remaining portion of the second sacrificial layer;
- and
- removing the remaining portion of the second sacrificial layer.
Dependencies are inferred from the claim text.