High temperature atomic layer deposition of silicon-containing film
AssigneeVersum Materials US, LLC
InventorsMeiliang Wang, Xinjian Lei
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Abstract
A method and composition for depositing a silicon oxide film in an atomic layer deposition process at one or more temperatures of 600° C. or greater are provided. In one aspect, there is provided a method to deposit a silicon oxide film or material on a substrate in a reactor at one or more temperatures ranging from about 600° C. to 1000° C.; comprising the steps of: introducing into the reactor at least one halidocarbosilane precursor selected from the group of compounds having Formulae I and II described herein; purging the reactor with a purge gas; introducing an oxygen-containing source into the reactor; and purging the reactor with a purge gas; and wherein the steps are repeated until a desired thickness of silicon oxide is deposited.
Claims11
A method to deposit a silicon oxide film, the method comprising the steps of:
- a. providing a substrate comprising a surface in a reactor and heating the reactor to a temperature ranging from about 600° C. to about 1000° C.
- b. introducing into the reactor at least one halidocarbosilane precursor selected from the group of compounds having the following Formulae I and II:
- R3-nXnSi—R1—SiXmR23-m I
- R3-nXnSi—R1—SiXqR3p—R1—SiXmR23-m II
- wherein X═Cl, Br, or I;
- R and R2 are each independently selected from a hydrogen atom, and a C1 to C3 alkyl group;
- R1 is a C1 linker bonded to two silicon atoms and selected from methylene, (methyl) methylene, (dimethyl) methylene and (ethyl) methylene;
- R3 is selected from hydrogen and a C1 to C3 alkyl group;
- n=1, 2, or 3;
- m=0,1, 2 or 3;
- p=0, 1 or 2, q=0, 1, or 2, and p+q=2, wherein the at least one halidocarbosilane precursor reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer;
- c. purging the reactor of any unconsumed precursors and/or reaction by-products from step b with a first purge gas;
- d. introducing an oxygen-containing source into the reactor to react with the chemisorbed film to form a silicon oxide film;
- and
- e. purging the reactor of any unconsumed oxygen-containing source and/or reaction by-products from step d with a second purge gas which is the same as or different from the first purge gas;
- and
- wherein steps b through e are repeated until a desired thickness of the silicon oxide film is deposited, wherein the silicon oxide film has a carbon content in an amount of less than 5 at. % as measured by X-Ray Photoelectron Spectroscopy (XPS).
A method to deposit a silicon oxide film comprising the steps of:
- a. providing a substrate in a reactor and heating the reactor to a temperature ranging from about 600° C. to about 1000° C.;
- b. introducing into the reactor at least one halidocarbosilane precursor selected from the group of compounds having the following Formulae I and II:
- R3-nXnSi—R1—SiXmR23-m I
- R3-nXnSi—R1—SiXqR3p—R1—SiXmR23-m II
- wherein X═Cl, Br, or I;
- R and R2 are each independently selected from a hydrogen atom, and a C1 to C3 alkyl group;
- R1 is a C1 linker bonded to two silicon atoms and selected from methylene, (methyl) methylene, (dimethyl) methylene and (ethyl) methylene;
- R3 is selected from hydrogen and a C1 to C3 alkyl group;
- n=1, 2, or 3;
- m=0, 1, 2 or 3;
- p=0, 1 or 2, q=0, 1, or 2, and p+q=2 to form a layer on the substrate;
- c. purging the reactor of any unconsumed precursors and/or reaction by-products from step b with a first purge gas;
- d. introducing an oxygen-containing source into the reactor to react with the layer to form a silicon oxide film;
- e. purging the reactor of any unconsumed oxygen-containing source and/or reaction by-products from step d with a second purge gas which is the same as or different from the first purge gas;
- f. introducing a hydroxyl containing source into the reactor to react with the silicon oxide film;
- g. purging the reactor with a purge gas to remove any unreacted hydroxyl containing source and/or any reaction by-products;
- and
- wherein steps b through g are repeated until a desired thickness of the silicon oxide film is formed, wherein the silicon oxide film has a carbon content in an amount of less than 5 at. % as measured by X-Ray Photoelectron Spectroscopy (XPS).
Dependencies are inferred from the claim text.