Device for protecting FEOL element and BEOL element
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPing-Chun Yeh, Lien-Yao Tsai, Shao-Chi Yu
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Abstract
A method includes forming a front-end-of-the-line (FEOL) element over a substrate; forming a back-end-of-the-line (BEOL) element over the FEOL element; forming an interconnection structure over the substrate; forming a conductive shielding layer electrically connected to the interconnection structure and vertically overlapping the FEOL element and the BEOL element, wherein the conductive shielding layer is grounded to the substrate through the interconnection structure; and forming a dielectric layer covering the conductive shielding layer.
Claims20
A method, comprising:
- forming a front-end-of-the-line (FEOL) element over a substrate, wherein the substrate comprises a first implantation region and a second implantation region within the first implantation region, the second implantation region has a same type dopant as the first implantation region, and has a higher dopant concentration than the first implantation region;
- forming a back-end-of-the-line (BEOL) element over the FEOL element;
- forming an interconnection structure over the substrate;
- forming a conductive shielding layer in contact with the interconnection structure and vertically overlapping the FEOL element and the BEOL element, wherein the conductive shielding layer is grounded to the second implantation region of the substrate through the interconnection structure;
- and
- forming a dielectric layer covering the conductive shielding layer.
A method, comprising:
- forming a front-end-of-the-line (FEOL) element over a substrate having a first implantation region;
- forming a back-end-of-the-line (BEOL) element over the FEOL element;
- forming a first interconnection structure over the substrate;
- forming a dielectric layer covering the first interconnection structure;
- and
- forming a micro electromechanical system (MEMS) wafer over the dielectric layer and vertically overlapping the FEOL element and the BEOL element, wherein the MEMS wafer is grounded to a second implantation region of the substrate within the first implantation region of the substrate through the first interconnection structure, and wherein the second implantation region has a same type dopant as the first implantation region, and has a higher dopant concentration than the first implantation region.
A method, comprising:
- forming a front-end-of-the-line (FEOL) element over a substrate;
- forming a back-end-of-the-line (BEOL) element over the FEOL element;
- forming an interconnection structure over the substrate;
- forming a conductive shielding layer electrically connected to the interconnection structure;
- and
- forming a micro electromechanical system (MEMS) wafer having a MEMS device over the conductive shielding layer, wherein the MEMS wafer is a silicon wafer and is electrically connected to the conductive shielding layer through a conductive material in the MEMS wafer, and wherein the conductive shielding layer and the MEMS wafer are grounded to the substrate through the interconnection structure.
Dependencies are inferred from the claim text.