Bypass structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsEason Hsieh, Fei-Lung Lai, Kuei-Sung Chang
Life of this patent
Estimating the term…
Abstract
An integrated CMOS-MEMS device includes a first substrate having a CMOS device, a second substrate having a MEMS device, an insulator layer disposed between the first substrate and the second substrate, a dischargeable ground-contact, an electrical bypass structure, and a contrast stress layer. The first substrate includes a conductor that is conductively connecting to the CMOS devices. The electrical bypass structure has a conducting layer conductively connecting this conductor of the first substrate with the dischargeable ground-contact through a process-configurable electrical connection. The contrast stress layer is disposed between the insulator layer and the conducting layer of the electrical bypass structure.
Claims20
An apparatus comprising:
- a first substrate comprising a semiconductor device and a conductor that is electrically coupled to the semiconductor device;
- a second substrate comprising a microelectromechanical system (MEMS) device;
- an insulator layer between the first substrate and the second substrate;
- a ground contact between the first substrate and the insulator layer;
- and
- a metal bypass structure between the first substrate and the insulator layer and further between and electrically coupled to the conductor and the ground contact, wherein the metal bypass structure is sunken at a gap between the conductor and the ground contact, and wherein the conductor and the ground contact are at a common elevation.
An apparatus comprising:
- a first substrate comprising a complementary metal-oxide-semiconductor (CMOS) device and a conductor that is electrically coupled to the CMOS device;
- a second substrate comprising a microelectromechanical system (MEMS) device;
- an insulator layer between the first substrate and the second substrate;
- a ground contact between the first substrate and the insulator layer;
- and
- a metal bypass structure between the first substrate and the insulator layer and further between and electrically coupled to the conductor and the ground contact;
- wherein the metal bypass structure has a permanent break between the conductor and the ground contact, wherein the metal bypass structure is configured to electrically couple the conductor and the ground contact together before formation of the permanent break, wherein the metal bypass structure is configured to electrically isolate the conductor and the ground contact from each other by formation of the permanent break, wherein the metal bypass structure comprises nitrogen, and wherein a concentration of nitrogen in the metal bypass structure increases in a direction transverse to a top surface of the conductor from the insulator layer to the conductor.
An apparatus comprising:
- a first substrate comprising a complementary metal-oxide-semiconductor (CMOS) device and a conductor that is electrically coupled to the CMOS device;
- a second substrate comprising a microelectromechanical system device;
- an insulator layer between the first substrate and the second substrate;
- a ground contact between the first substrate and the insulator layer;
- and
- a conductive bypass structure between the first substrate and the insulator layer and further between and electrically coupled to the conductor and the ground contact, wherein the conductive bypass structure comprises multiple conductive layers, wherein the multiple conductive layers form a pair of common sidewalls respectively overlying the ground contact and the conductor, and wherein the insulator layer extends along the common sidewalls.
Dependencies are inferred from the claim text.