US 12,295,128 B2Granted

Packaged power electronic device, in particular bridge circuit comprising power transistors, and assembling process thereof

AssigneeSTMicroelectronics S.r.l.

InventorsCristiano Gianluca Stella, Francesco Salamone

Life of this patent

Estimating the term…

Loading patent…

Abstract

The device has a first support element forming a first thermal dissipation surface and carrying a first power component; a second support element forming a second thermal dissipation surface and carrying a second power component, a first contacting element superimposed to the first power component; a second contacting element superimposed to the second power component; a plurality of leads electrically coupled with the power components through the first and/or the second support elements; and a thermally conductive body arranged between the first and the second contacting elements. The first and the second support elements and the first and the second contacting elements are formed by electrically insulating and thermally conductive multilayers.

Claims20

Dependent claims

A method, comprising:

arranging first and second support elements, each having first and second faces and formed by an electrically insulating and thermally conductive multilayer;
bonding a first electronic component to the second face of the second support element, bonding a second electronic component to the second face of the first support element, bonding a third electronic component to the second face of the second support element, and bonding a fourth electronic component to the second face of the first support element, and the first electronic component is a first power transistor, the second electronic component is a second power transistor, the third electronic component is a third power transistor, and the fourth electronic component is a fourth power transistor;
bonding a first lead on the second face of the second support element and a second lead on the second face of the second support element;
forming a thermal distribution structure that includes first, second, and third contacting elements and an intermediate mass, the first, second, and third contacting elements each include an electrically insulating and thermally conductive multilayer, the first contacting element being arranged on a first side of the intermediate mass, the second contacting element being arranged on a second side of the intermediate mass, and the third contacting element being arranged on the second side of the intermediate mass and adjacent to and electrically insulated with respect to the second contacting element;
bonding the first contacting element of the thermal distribution structure to the second electronic component, bonding the second contacting element of the thermal distribution structure to the first electronic component, and bonding the third contacting element to the third power transistor and the fourth power transistor;
and
forming a packaging mass surrounding the thermal distribution structure and the first and the second support elements, the first face of the first support element forming a first thermal dissipation surface of a device and the first face of the second support element forming a second thermal dissipation surface of the device, and
wherein bonding the third power transistor to the second surface of the second support element and bonding the fourth power transistor to the second surface of the first support element occurs before bonding the first and second contacting elements to the first and second electronic components.

5 more elements

A method, comprising:

forming a first assembly including:
coupling a first MOSFET transistor to a first support element;
coupling a second MOSFET transistor to the first support element;
arranging a first contacting element to overlap the first MOSFET transistor and the second MOSFET transistor, the first contacting element straddling the first MOSFET transistor and the second MOSFET transistor;
and
arranging a block of thermally conductive material on the first contacting element;
forming a second assembly including:
coupling a third MOSFET transistor to a second support element;
coupling a fourth MOSFET transistor to the second support element;
arranging a first clip element on the third MOSFET transistor;
arranging a second clip element on the fourth MOSFET transistor;
arranging a second contacting element on the first clip element;
and
arranging a third contacting element on the second clip element;
coupling the first assembly to the second assembly includes stacking the second contacting element and the third contacting element onto the block of thermally conductive material.

12 more elements

A method, comprising:

forming a first assembly including:
coupling a first MOSFET transistor to a first support element;
coupling a second MOSFET transistor to the first support element;
arranging a first contacting element to overlap the first MOSFET transistor and the second MOSFET transistor, the first contacting element straddling the first MOSFET transistor and the second MOSFET transistor;
and
arranging a block of thermally conductive material on the first contacting element;
forming a second assembly including:
coupling a first supporting region to a second support element;
coupling a second supporting region to the second support element, the second supporting region being spaced apart from the first supporting region;
coupling a third MOSFET transistor to the second support element;
coupling a fourth MOSFET transistor to the second support element;
arranging a first clip element on the third MOSFET transistor and on the first supporting region on the second support element, the first clip element extending laterally outward from a first end of the third MOSFET transistor;
arranging a second clip element on the fourth MOSFET transistor and on the second supporting region on the second support element, the second clip element extending laterally outward form a second end of the fourth MOSFET transistor;
arranging a second contacting element on the first clip element;
and
arranging a third contacting element on the second clip element;
coupling the first assembly to the second assembly includes stacking the second contacting element and the third contacting element onto the block of thermally conductive material.

14 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/395,137Filed 22 Dec 2023 · division
Priority: IT 1020190000137431 Aug 2019
Published: US 2024/0206133 A120 Jun 2024
Granted: 6 May 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification35 codes

H05K 7/209
For power electronics, e.g. for inverters for controlling motor: heat transfer by conduction from internal heat source to heat radiating structure
H10W 74/111
Characterised by their shape or disposition: the semiconductor body being completely enclosed
H10W 40/255
Characterised by their materials: having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
H10W 40/778
Auxiliary members characterised by their shape: in encapsulations

Family

Application16/934,991Parent of this division · filed 21 Jul 2020
US 2024/0206133 A1Pre-grant publication · published 20 Jun 2024
US 11,864,361 B2Parent of this division
US 2021/0037674 A1Published application
US 12,295,128 B2This patent

From the US filing history. Foreign family members aren’t listed.