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US 12,293,906 B2Granted
Mn—Ta—W—Cu—O-based sputtering target, and production method therefor
AssigneeDexerials Corporation
InventorYuichi Kamori
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Abstract
Provided is a Mn—Ta—W—Cu—O-based sputtering target including, in the component composition, Mn, Ta, W, Cu, and O. The sputtering target has a relative density of at least 90%, and includes a crystal phase of Mn4Ta2O9. Also provided is a production method for the sputtering target.
Claims8
A Mn—Ta—W—Cu—O-based sputtering target comprising:
- Mn, Ta, W, Cu and O in a component composition,
- wherein Mn is 5 atom % to 40 atom %, Ta is 10 atom % to 35 atom %, W is 5 atom % to 30 atom %, and Cu is 5 atom % to 30 atom %, and a proportion combining Ta and W is less than 65 atom %, relative to a total of 100 atom % of constituent elements excluding O, and
- wherein the sputtering target is a sintered component composition having a relative density of at least 90%, and contains a crystalline phase of Mn4Ta2O9.
Dependencies are inferred from the claim text.