Cathode unit for magnetron sputtering apparatus and magnetron sputtering apparatus

A cathode unit for a magnetron sputtering apparatus, comprising first and second magnet units that are disposed on a side opposed to a sputtering surface of a target set in a posture facing an inside of a vacuum chamber and are respectively driven to rotate around an axis extending in a direction orthogonal to the sputtering surface, wherein

• the first magnet unit having a first pair of magnets is configured to cause a first leakage magnetic field, in which a position where a vertical component of the first leakage magnetic field becomes zero forms a closed loop, to act on a first space in front of the sputtering surface including a center of the target inward,
• the second magnet unit having a second pair of magnets is configured to cause a second leakage magnetic field, in which a position where a vertical component of the second leakage magnetic field becomes zero forms a closed loop, to act locally unevenly from the target center on a second space in front of the sputtering surface located between the target center and an outer edge of the target, and also to enable self-holding discharge under low pressure of plasma confined by the second leakage magnetic field,
• the cathode unit further comprising a driving unit configured to move the second magnet unit to a position close to the sputtering surface of the target, and configured to move the first magnet unit and the second magnet unit to a position so that magnetic field interference does not occur, and
• the second magnet unit is provided via a support arm extending contractible in a radial direction from the axis.