Effect pigments having a reflective core and semiconductor layers
AssigneeEckart America Corporation
InventorsDevin Schmitt, Jonglak Choi
Life of this patent
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Abstract
Disclosed herein is an effect pigment having a layer stack which comprises a highly reflective metallic flake having a first major interface and opposed to this first interface a second major interface, and at least one side surface and directly adjacent on one or of both of these major interfaces a layer of a semiconducting material having an average atomic composition of: a) Si(1-x)Snx, wherein 0<x<0.90 or b) Ge(1-y)Sny, wherein 0<y≤0.80 or c) Si(1-m-n)GemSnn, wherein 0<m<1.00, 0<n<1.00 and with the proviso that m+n<1.00.
Claims19
An effect pigment having a layer stack which comprises a highly reflective metallic flake having a first major interface and opposed to this first interface a second major interface, and at least one side surface and directly adjacent on one or of both of these major interfaces a layer of a semiconducting material having an average atomic composition of:
- a) Si(1-x)Snx, wherein 0<x<0.90 or
- b) Ge(1-y)Sny, wherein 0<y≤0.80 or
- c) Si(1-m-n)GemSnn, wherein 0<m<1.00, 0<n<1.00 and with the proviso that m+n<1.00.
A method of manufacturing an effect pigment using a PVD process comprising:
- a) coating a thin, flexible substrate with a release coat agent,
- b) depositing a first semiconductor layer onto the flexible substrate using a roll-to-roll process,
- c) depositing a layer of a highly reflective metal onto the first semiconductor layer,
- d) depositing a second semiconductor layer onto the highly reflective metal layer, and
- e) stripping the material stack from the flexible substrate in a solvent;
- the resulting effect pigment having a layer stack which comprises a highly reflective metallic flake having a first major interface and opposed to this first interface a second major interface, and at least one side surface and directly adjacent on one or of both of these major interfaces a layer of a semiconducting material having an average atomic composition of:
- a) Si(1-x)Snx, wherein 0<x<0.90 or
- b) Ge(1-y)Sny, wherein 0<y≤0.80 or
- c) Si(1-m-n)GemSnn, wherein 0<m<1.00, 0<n<1.00 and with the proviso that m+n<1.00.
Dependencies are inferred from the claim text.