RF acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer
AssigneeAkoustis, Inc.
InventorsJeffrey B. Shealy, Mary Winters, Craig Moe
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Abstract
An RF integrated circuit device can includes a substrate and a High Electron Mobility Transistor (HEMT) device on the substrate including a ScAlN layer configured to provide a buffer layer of the HEMT device to confine formation of a 2DEG channel region of the HEMT device. An RF piezoelectric resonator device can be on the substrate including the ScAlN layer sandwiched between a top electrode and a bottom electrode of the RF piezoelectric resonator device to provide a piezoelectric resonator for the RF piezoelectric resonator device.
Claims19
An RF integrated circuit device comprising:
- a silicon substrate;
- and
- a ScAlN layer providing a buffer layer for an epi-grown material stack included in an RF High Electron Mobility Transistor (HEMT) device on the silicon substrate and providing a piezoelectric resonator structure included in an RF filter on the silicon substrate,
- wherein the HEMT device comprises:
- a group III-N channel layer lattice matched to and on the buffer layer;
- a group III-N barrier layer on the group III-N channel layer, the group III-N barrier layer having a stress in a range between about −400Mpa and about +400 MPa and to provide a channel region in the group III-N channel layer;
- a group III-N drain region recessed into the group III-N channel layer at a first end of the channel region;
- a group III-N source region recessed into the group III-N channel layer at a second end of the channel region opposite the first end of the channel region;
- and
- a gate electrode between the group III-N drain region and the group III-N source region.
An RF integrated circuit device comprising:
- a silicon substrate;
- and
- a layer including Sc and a Group III-N material providing a buffer layer for an epi-grown material stack included in an RF High Electron Mobility Transistor (HEMT) device on the silicon substrate and providing a piezoelectric resonator structure included in an RF filter on the silicon substrate,
- wherein the RF HEMT device comprises:
- a group III-N channel layer lattice matched to and on the buffer layer:
- a group III-N barrier layer on the group III-N channel layer, the group III-N barrier layer having a stress in a range between about −400Mpa and about +400 MPa and to provide a channel region in the group III-N channel layer:
- a group III-N drain region recessed into the group III-N channel layer at a first end of the channel region;
- a group III-N source region recessed into the group III-N channel layer at a second end of the channel region opposite the first end of the channel region;
- and
- a gate electrode between the group III-N drain region and the group III-N source region.
Dependencies are inferred from the claim text.