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US 12,288,787 B2Granted
Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorMotoyoshi Kubouchi
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Abstract
A semiconductor device includes a semiconductor substrate including an active region and an outer peripheral region. The active region includes a transistor portion and a diode portion. The outer peripheral region includes a current sensing unit. A lifetime control region including a lifetime killer is provided from the diode portion to at least a part of the transistor portion. The current sensing unit includes a sense transistor non-irradiation region not provided with the lifetime control region and a sense transistor irradiation region provided with the lifetime control region.
Claims20
A semiconductor device comprising:
- a semiconductor substrate including an active region and an outer peripheral region, wherein
- the active region includes a transistor portion and a diode portion,
- the outer peripheral region includes a current sensing unit,
- a lifetime control region including a lifetime killer is provided from the diode portion to at least a part of the transistor portion, and
- the current sensing unit includes a sense transistor non-irradiation region not provided with the lifetime control region and a sense transistor irradiation region provided with the lifetime control region.
2 more elements
Dependencies are inferred from the claim text.