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US 12,288,706 B2Granted
Parameterizing x-ray scattering measurement using slice-and-image tomographic imaging of semiconductor structures
AssigneeCarl Zeiss SMT GmbH
InventorsHans Michael Stiepan, Thomas Korb, Eugen Foca, Alex Buxbaum, Dmitry Klochkov, Jens Timo Neumann
Life of this patent
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Abstract
Semiconductor structures can be investigated, e.g., in an in-line quality check. An x-ray scattering measurement, e.g., CD-SAXS, can be used for wafer metrology. The x-ray scattering measurement can be configured based on a slice-and-imaging tomographic measurement using a dual-beam device, e.g., including a focused ion beam device and a scanning electron microscope.
Claims16
A method, comprising:
- performing a slice-and-image tomographic measurement to obtain one or more three-dimensional volume images of a wafer comprising semiconductor structures;
- parameterizing an x-ray scattering measurement based on the one or more three-dimensional volume images;
- and
- after parameterizing the x-ray scattering measurement, performing the x-ray scattering measurement to obtain one or more measurement spectra of the wafer or one or more further wafers comprising the semiconductor structures or further semiconductor structures,
- wherein the x-ray scattering measurement is performed in-line of a production line, and the slice-and-image measurement is performed out-of-line of the production line.
2 more elements
Dependencies are inferred from the claim text.