Method of manufacturing a trench capacitor with wafer bow
AssigneeSK keyfoundry Inc.
InventorSeung Mo Jo
Life of this patent
Estimating the term…
Abstract
A trench capacitor manufacturing method is provided. The method includes forming a deep trench in a wafer, forming a trench capacitor structure including a plurality of dielectric films and a plurality of conductive layers in the deep trench; determining if the wafer has a tensile stress based on the forming of the trench capacitor structure; performing a high temperature heat treatment to the trench capacitor structure to change a form of the wafer to a direction that offsets the tensile stress; forming an inter-layer insulating film on the trench capacitor structure; and forming a metal interconnect on the inter-layer insulating film.
Claims11
A deep trench capacitor, comprising:
- a first deep trench and a second deep trench disposed in a substrate;
- a first dielectric layer, a first conductive layer, and a second dielectric layer disposed on the first deep trench and the second deep trench, respectively;
- a first upper electrode disposed on the second dielectric layer in the first deep trench;
- a second upper electrode disposed on the second dielectric layer in the second deep trench and spaced apart from the first upper electrode;
- a first gap-fill insulating film disposed on the first upper electrode, wherein a first void is formed in the first deep trench;
- a second gap-fill insulating film disposed on the second upper electrode and spaced apart from the first gap-fill insulating film, wherein a second void is formed in the second deep trench;
- a first inter-layer insulating film disposed on the first gap-fill insulating film and the second gap-fill insulating film;
- first level metal interconnects disposed on the first inter-layer insulating film;
- a second inter-layer insulating film disposed on the first inter-layer insulating film;
- and
- second level metal interconnects disposed on the second inter-layer insulating film.
A deep trench capacitor, comprising:
- a first deep trench and a second deep trench disposed in a substrate;
- a first dielectric layer, a first conductive layer, and a second dielectric layer, disposed on the first and second deep trenches, respectively;
- a first upper electrode and a second upper electrode disposed on the second dielectric layer and disposed on the first and second deep trenches, respectively;
- a first gap-fill insulating film and a second gap-fill insulating film spaced apart from each other and disposed on the first and second deep trenches, respectively, wherein a first void and a second void are formed in the first gap-fill insulating film and the second gap-fill insulating film, respectively;
- a first inter-layer insulating film disposed on the first gap-fill insulating film and the second gap-fill insulating film;
- and
- first level metal interconnects disposed on the first inter-layer insulating film.
Dependencies are inferred from the claim text.