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US 12,287,064 B2Granted
Gas container and deposition system including the same
AssigneesSamsung Electronics Co., Ltd., SK Specialty Co., Ltd
InventorsSunhye Hwang, Wonwoong Chung, Younjoung Cho, Youngha Song, Yonghun Shin, Byungkil Lee, Sungdo Lee, Jinhee Lee
Life of this patent
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Abstract
A deposition system and a gas storage device, the deposition system including a process chamber; and a gas supply outside of the process chamber, the gas supply being configured to provide monochlorosilane, wherein the gas supply includes a cabinet; and a gas container inside the cabinet, and the gas container includes aluminum (Al).
Claims11
A deposition system, comprising:
- a process chamber;
- a gas supply outside of the process chamber, the gas supply being configured to provide gaseous monochlorosilane;
- and
- a gas supply pipe connecting the gas supply to the process chamber,
- wherein the gas supply includes:
- a cabinet, and
- a gas container inside the cabinet, the gas container containing the gaseous monochlorosilane,
- wherein the gas container includes aluminum (Al),
- wherein a ratio of an amount of monochlorosilane to an internal volume of the gas container is 0.7 kg/L to 0.8 kg/L,
- wherein the gas container comprises:
- an external container,
- a first aluminum oxide layer on an internal surface of the external container, and
- a first passivation layer comprising monochlorosilane on an internal surface of the first aluminum oxide layer, the first passivation layer formed by rolling the gas container after monochlorosilane is provided in the gas container, and
- wherein the gas supply pipe includes:
- an aluminum layer,
- a second aluminum oxide layer covering an internal surface of the aluminum layer, and
- a second passivation layer comprising monochlorosilane on an internal surface of the second aluminum oxide layer.
14 more elements
A deposition system, comprising:
- a process chamber;
- a gas supply outside the process chamber, the gas supply being configured to provide gaseous monochlorosilane;
- and
- a gas supply pipe connecting the gas supply to the process chamber,
- wherein the gas supply includes:
- a cabinet, and
- a gas container inside the cabinet, the gas container containing the gaseous monochlorosilane,
- wherein the gas container includes aluminum (Al),
- wherein a roughness of an internal surface of the gas container is 10 nm to 1 μm,
- wherein a ratio of an amount of monochlorosilane to an internal volume of the gas container is 0.7 kg/L to 0.8 kg/L, and
- wherein the gas container comprises an external container and as first aluminum oxide layer on an internal surface of the external container, and
- wherein the gas container further comprises a first passivation layer comprising monochlorosilane on an internal surface of the first aluminum oxide layer, the first passivation layer formed by rolling the gas container after monochlorosilane is provided in the gas container, and
- wherein the gas supply pipe includes:
- an aluminum layer,
- a second aluminum oxide layer covering an internal surface of the aluminum layer, and
- a second passivation layer comprising monochlorosilane on an internal surface of the second aluminum oxide layer.
13 more elements
Dependencies are inferred from the claim text.