Method for producing nitride semiconductor photoelectrode
AssigneeNippon Telegraph and Telephone Corporation
InventorsYuya Uzumaki, Sayumi Sato, Yoko Ono, Takeshi Komatsu
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Abstract
Provided is a method for producing a nitride semiconductor photoelectrode capable of improving the light energy conversion efficiency. The method for producing a nitride semiconductor photoelectrode includes a first step of forming an n-type gallium nitride layer on an insulating or conductive substrate, a second step of forming an indium gallium nitride layer on the n-type gallium nitride layer, a third step of forming a nickel layer n the indium gallium nitride layer, and a fourth step of heat-treating the nickel layer in an oxygen atmosphere.
Claims7
A method for producing a nitride semiconductor photoelectrode comprising:
- a first step of forming a 2 μm thick n-type gallium nitride layer having a carrier density of 3×1018 cm−3 directly on an insulating or conductive substrate;
- a second step of forming a 100 nm thick indium gallium nitride layer having an indium composition ratio of 5% directly on the n-type gallium nitride layer;
- a third step of forming a 1 nm thick nickel layer directly on the indium gallium nitride layer;
- and
- a fourth step of heat-treating the nickel layer in an oxygen atmosphere,
- therein the 1 nm thick nickel layer after the fourth step becomes an oxygen-excessive nickel oxide layer having a 2 nm thickness and exhibits characteristics as a p-type semiconductor.
Dependencies are inferred from the claim text.