US 12,286,701 B2 · Preparation method for tungsten sulfide solid lubricating film based on high power impulse magnetron sputtering

Abstract

A preparation method for a tungsten sulfide (WS2) solid lubricating film based on high power impulse magnetron sputtering (HiPIMS) is provided. The preparation method includes the following steps: step 1: depositing a metal conductive film on a surface of a WS2 target; step 2: using magnetic field sputtering to remove the metal conductive film in a target sputtering area on the surface of the WS2 target, thereby obtaining a first WS2 target; and step 3: performing the HiPIMS on the first WS2 target to obtain the WS2 solid lubricating film. The preparation method can achieve stable glow discharge of a WS2 target and use the high deposition energy of HiPIMS to prepare the WS2 solid lubricating film with high compactness and excellent wear resistance.

Claims13

Dependent claims

A preparation method for a tungsten sulfide (WS2) solid lubricating film based on high power impulse magnetron sputtering (HiPIMS), comprising:

step 1:
depositing a metal conductive film on a surface of a WS2 target by using a titanium (Ti) target;
step 2:
using magnetic field sputtering to remove a part of the metal conductive film on the surface of the WS2 target, thereby obtaining a first WS2 target, wherein a resting part of the metal conductive film is remained on the surface of the WS2 target, and a part of the WS2 target is exposed from a surface of the first WS2 target;
and
step 3:
depositing, through the Ti target, a Ti layer on a substrate by using magnetron sputtering technology, and performing the HiPIMS on the first WS2 target to deposit a WS2 solid lubricating layer on the Ti layer, thereby obtaining the WS2 solid lubricating film.

4 more elements

A preparation method for a WS2 solid lubricating film based on HiPIMS, comprising:

step 1, installing a Ti target and a WS2 target on adjacent target seats in a vacuum chamber, setting operation parameters of an HiPIMS power source for the Ti target, setting operation parameters of an HiPIMS power source for the WS2 target, and turning on the HiPIMS power source for the Ti target and the HiPIMS power source for the WS2 target to deposit a Ti film on a surface of the WS2 target, wherein under the operation parameters of the HiPIMS power source for the Ti target and the operation parameters of an HiPIMS power source for the WS2 target, glow discharge for the Ti target is achieved, and glow discharge for the WS2 target is not achieved;
step 2, turning off the HiPIMS power source for the Ti target and the HiPIMS power source for the WS2 target, resetting the operation parameters of the HiPIMS power source for the WS2 target, and turning on the HiPIMS power source for the WS2 target to remove a part of the Ti film from the surface of the WS2 target and remain a resting part of the Ti film, wherein under the reset operation parameters of the HiPIMS power source for the WS2 target, the glow discharge for the WS2 target is achieved;
and
step 3, installing stainless steel in the vacuum chamber, turning on the HiPIMS power source for the Ti target to deposit a Ti layer on the stainless steel, and turning on the HiPIMS power source for the WS2 target to perform the HiPIMS on the WS2 target to deposit a WS2 solid lubricating layer on the Ti layer, thereby obtaining the WS2 solid lubricating film.

1 more element

Dependencies are inferred from the claim text.

Preparation method for tungsten sulfide solid lubricating film based on high power impulse magnetron sputtering

Life of this patent

Preparation method for tungsten sulfide solid lubricating film based on high power impulse magnetron sputtering

Life of this patent

Abstract

Claims13