Semiconductor device
AssigneeSocionext Inc.
InventorsAtsushi Okamoto, Hirotaka Takeno, Wenzhen Wang
Life of this patent
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Abstract
A semiconductor device includes a first chip including a substrate and a first wiring layer formed on a first surface of the substrate; and a second wiring layer formed on a second surface of the substrate opposite to the first surface of the substrate. The second wiring layer includes a first power line to which a first power potential is applied; a second power line to which a second power potential is applied; a third power line to which a third power potential is applied; a first switch connected between the first power line and the second power line; and a second switch provided on one of the first power line or the third power line. The first chip includes a first circuit provided between the first power line and the third power line.
Claims15
A semiconductor device comprising:
- a first chip including a substrate and a first wiring layer formed on a first surface of the substrate;
- and
- a second chip formed on a second surface of the substrate opposite to the first surface of the substrate, the second chip including a second wiring layer formed on the second surface of the substrate opposite to the first surface of the substrate, wherein:
- the second wiring layer of the second chip includes;
- a first power line to which a first power potential is applied,
- a second power line to which a second power potential is applied,
- a third power line to which a third power potential is applied,
- a first switch connected between the first power line and the second power line, and
- a second switch provided on one of the first power line or the third power line, and
- the first chip includes a first circuit provided between the first power line and the third power line.
Dependencies are inferred from the claim text.