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US 12,283,926 B2Granted
Comparator, photoelectric conversion device, and apparatus
AssigneeCanon Kabushiki Kaisha
InventorsHideo Kobayashi, So Hasegawa
Life of this patent
Estimating the term…
Abstract
A comparator according to an embodiment of the present disclosure includes a first differential transistor and a second differential transistor forming a differential pair, a first load transistor and a second load transistor respectively provided corresponding to the first differential transistor and the second differential transistor, and a first cascode transistor connected in cascode between the first differential transistor and the first load transistor.
Claims21
A comparator comprising:
- a first differential transistor and a second differential transistor forming a differential pair;
- a first load transistor and a second load transistor respectively provided to the first differential transistor and the second differential transistor;
- a first cascode transistor connected in cascode between the first differential transistor and the first load transistor;
- and
- an amplitude limiting element configured to limit an amplitude of an output signal at an output node between the first load transistor and the first cascode transistor,
- wherein the amplitude limiting element is an amplitude limiting transistor, and a gate and a drain of the amplitude limiting transistor are connected to the output node, and
- wherein a gate of the first cascode transistor is connected to a source of the amplitude limiting transistor.
4 more elements
A comparator comprising:
- a first differential transistor and a second differential transistor forming a differential pair;
- a first load transistor and a second load transistor respectively provided to the first differential transistor and the second differential transistor;
- a first cascode transistor connected in cascode between the first differential transistor and the first load transistor;
- and
- an amplitude limiting element configured to limit an amplitude of an output signal at an output node between the first load transistor and the first cascode transistor,
- wherein the first cascode transistor satisfies the formula (1):
- Vds>Vgs−Vth (1)
- where Vds is voltage between the drain and the source, Vgs is voltage between the gate and the source, and Vth is threshold voltage,
- wherein the first cascode transistor satisfies the formula (2):
- Vds
- >
- Vgs
- -
- Vth
- =
- 2
-
- L
-
- I
- μ
-
- C
- o
-
- x
-
- W
- (
- 2
- )
- where L is gate length, I is drain current, μ is mobility, Cox is gate oxide film capacitance per unit area, and W is gate width, and
- wherein the gate length L of the first cascode transistor is shorter than the gate length of the first differential transistor.
30 more elements
Dependencies are inferred from the claim text.