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US 12,283,618 B2Granted
Inner spacer for semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFu-Ting Yen, Kuei-Lin Chan, Yu-Yun Peng
Life of this patent
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Abstract
A device includes at least one semiconductor unit which includes a first source/drain portion, a second source/drain portion, at least one nanosheet segment which is disposed to interconnect the first and second source/drain portions, a gate portion disposed around the at least one nanosheet segment, and a first inner spacer portion and a second inner spacer portion which are disposed to separate the gate portion from the first and second source/drain portions, respectively. Each of the first and second inner spacer portions has a carbon-rich region which confronts the gate portion.
Claims20
A method for manufacturing a device, comprising:
- forming a first nanosheet segment and a second nanosheet segment alternating with the first nanosheet segment;
- forming a gate structure over the first nanosheet segment and the second nanosheet segment such that a first end region of each of the first nanosheet segment and the second nanosheet segment is exposed from a first source/drain recess, and such that a second end region of each of the first nanosheet segment and the second nanosheet segment is exposed from a second source/drain recess;
- removing the first end region and the second end region of the second nanosheet segment to form a first lateral recess and a second lateral recess, respectively;
- forming a first inner spacer portion to fill the first lateral recess, and forming a second inner spacer portion to fill the second lateral recess;
- performing a treatment to permit each of the first inner spacer portion and the second inner spacer portion to have a carbon-rich region;
- forming a first source/drain portion and a second source/drain portion respectively in the first source/drain recess and the second source/drain recess;
- removing a portion of the gate structure to form an upper cavity;
- removing a remaining region of the second nanosheet segment through the upper cavity so as to form a lower cavity;
- and
- forming a gate portion in the upper cavity and the lower cavity.
7 more elements
A method for manufacturing a device, comprising:
- forming first nanosheet segments, second nanosheet segments alternating with the first nanosheet segments, and sacrificial bodies at opposite sides of a stack including the first nanosheet segments and the second nanosheet segments;
- forming a gate structure over the first nanosheet segments, the second nanosheet segments and the sacrificial bodies such that a first end region of each of the first nanosheet segments, the second nanosheet segments and the sacrificial bodies is exposed from a first source/drain recess, and such that a second end region of each of the first nanosheet segments, the second nanosheet segments and the sacrificial bodies is exposed from a second source/drain recess;
- removing the first end region and the second end region of the sacrificial bodies to form first inner gaps and second inner gaps, respectively;
- removing the first end regions and the second end regions of the second nanosheet segments to form first lateral recesses and second lateral recesses, respectively;
- forming a first inner spacer portion to fill the first inner gaps and the first lateral recesses, and forming a second inner spacer portion to fill the second inner gaps and the second lateral recesses;
- performing a treatment to permit each of the first inner spacer portion and the second inner spacer portion to have a carbon-rich region;
- forming a first source/drain portion and a second source/drain portion respectively in the first source/drain recess and the second source/drain recess;
- removing a portion of the gate structure to form an upper cavity;
- removing remaining regions of the second nanosheet segments through the upper cavity so as to form a lower cavity;
- and
- forming a gate portion in the upper cavity and the lower cavity to permit the gate portion to surround each of the first nanosheet segments.
8 more elements
A method for manufacturing a device, comprising:
- forming a nanosheet segment which has a first end region and a second end region opposite to each other;
- forming a first inner spacer portion and a second inner spacer portion respectively surrounding the first end region and the second end region;
- forming a first source/drain portion and a second source/drain portion that are interconnected by the nanosheet segment;
- forming a gate portion around the nanosheet segment, the gate portion being separated from the first source/drain portion and the second source/drain portion by the first inner spacer portion and the second inner spacer portion respectively;
- and
- forming a carbon-rich region in each of the first inner spacer portion and the second inner spacer portion.
3 more elements
Dependencies are inferred from the claim text.