Semiconductor device including cumulative sealing structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorLiang-Chen Lin
Life of this patent
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Abstract
A semiconductor device includes: a core region of core circuitry over a substrate; an input/output (I/O) region of interfacing circuitry over a substrate and coupled to the core region; a sealing ring having first, second and third sides, the sealing ring surrounding, and being isolated from, the core region and the I/O region; an intra-communication (intra-com) stack including intra-com segments in corresponding metallization layers which are stacked, the intra-com segments correspondingly extending between, and thereby coupling, the core region and the I/O region; and a first parapet on the intra-com stack and which extends from the first side to the third side of the sealing ring the first parapet being between, and isolated from each of, the core region and the I/O region.
Claims20
A semiconductor device comprising:
- a core region of core circuitry over a substrate;
- an input/output (I/O) region of interfacing circuitry over a substrate and coupled to the core region;
- a sealing ring having first, second and third sides, the sealing ring surrounding, and being isolated from, the core region and the I/O region;
- an intra-communication (intra-com) stack including intra-com segments in corresponding metallization layers which are stacked, the intra-com segments correspondingly extending between, and thereby coupling, the core region and the I/O region;
- and
- a first parapet on the intra-com stack and which extends from the first side to the third side of the sealing ring, the first parapet being between, and isolated from each of, the core region and the I/O region.
A semiconductor device comprising:
- a subject region including circuitry to be protected;
- a sealing ring having first, second and third sides, the sealing ring surrounding, and being isolated from, the subject region;
- and
- a first parapet over a substrate and which extends from the first side to the third side of the sealing ring, the subject region being between the second side and the first parapet, and the first parapet being isolated from the subject region;
- and
- an inter-communication (inter-com) stack on the first parapet and including inter-com segments in corresponding stacked metallization layers, the inter-com segments correspondingly coupling to the subject region and extending therefrom in a direction away from the second side.
A semiconductor device comprising:
- a subject region including circuitry to be protected;
- a sealing ring having first, second and third sides, the sealing ring surrounding, and being isolated from, the subject region;
- and
- a first parapet over a substrate and which extends from the first side to the third side of the sealing ring, the subject region being between the second side and the first parapet, and the first parapet being isolated from the subject region;
- and
- a second parapet over the first parapet and which extends from the first side to the third side of the sealing ring, the subject region being between the second side and the second parapet, the second parapet being isolated from the subject region;
- and
- wherein each of the first parapet and the second parapet includes:
- a first conductive segment;
- a second conductive segment above the first conductive segment in a height direction of the corresponding parapet;
- and
- a dielectric material between the first conductive segment and the second conductive segment relative to the height direction.
Dependencies are inferred from the claim text.