Method for fabricating semiconductor device with contact structure

A method for fabricating a semiconductor device, comprising:

• providing a photomask comprising:
• a translucent layer on a mask substrate and comprising a first mask opening which exposes a portion of the mask substrate;
• and
• an opaque layer on the translucent layer and comprising a second mask opening which exposes a portion of the translucent layer and the portion of the mask substrate;
• providing a stack structure comprising an etch stop layer on a bottom conductive layer and a first inter-dielectric layer on the etch stop layer;
• forming a pre-process mask layer on the stack structure;
• patterning the pre-process mask layer using the photomask to form a patterned mask layer comprising a mask region corresponding to the opaque layer, a body portion region corresponding to the translucent layer, and a hole corresponding to the first mask opening, wherein a thickness of the body portion region is less than a thickness of the mask region;
• and
• performing an opening-etching process to form an body portion opening and a contact portion opening in the stack structure to expose a portion of the bottom conductive layer, and forming a contact structure in the body portion opening and the contact portion opening;
• wherein a width of the body portion opening is greater than a width of the contact portion opening.