Processing method, method of manufacturing semiconductor device, processing apparatus, and recording medium

A method of manufacturing a semiconductor device, comprising:

• (a) forming an inhibitor layer on a surface of a first material of a concave portion provided on a surface of a substrate, by supplying a precursor to the substrate to adsorb at least a portion of a molecular structure of molecules constituting the precursor on the surface of the first material of the concave portion, the concave portion being composed of the first material containing a first element and a second material containing a second element different from the first element;
• and
• (b) growing a film on a surface of the second material of the concave portion by supplying a film-forming material to the substrate having the inhibitor layer formed on the surface of the first material,
• (c) forming a hydroxyl group termination on the surface of the first material before performing (a).

A processing apparatus comprising:

• a precursor supply system configured to supply a precursor to a substrate;
• a film-forming material supply system configured to supply a film-forming material to the substrate;
• and
• a controller configured to be capable of controlling an operation of the processing apparatus so as to perform a process including:
• (a) forming an inhibitor layer on a surface of a first material of a concave portion provided on a surface of the substrate, by supplying the precursor to the substrate to adsorb at least a portion of a molecular structure of molecules constituting the precursor on the surface of the first material of the concave portion, the concave portion being composed of the first material containing a first element and a second material containing a second element different from the first element;
• and
• (b) growing a film on a surface of the second material of the concave portion by supplying the film-forming material to the substrate having the inhibitor layer formed on the surface of the first material,
• (c) forming a hydroxyl group termination on the surface of the first material before performing (a).