Back to results
US 12,279,372 B2Granted
Component carrier with a magnetic element and a manufacturing method
AssigneeAT&S Austria Technologie & Systemtechnik Aktiengesellschaft
InventorsIvan Salkovic, Vanesa López Blanco
Life of this patent
Estimating the term…
Abstract
A component carrier includes a stack including at least one electrically conductive layer structure and/or at least one electrically insulating layer structure, a magnetic element assembled to the stack, and a dielectric layer structure on the stack. The magnetic element includes an embedded inductive element. The dielectric layer structure at least partially surrounds the magnetic element. Further, a manufacturing method and a use of photo-imaging are described.
Claims8
A component carrier, comprising:
- a stack including at least one electrically conductive layer structure and at least one electrically insulating layer structure;
- a magnetic element assembled to the stack, the magnetic element including an embedded inductive element;
- and
- a dielectric layer structure on the stack, the dielectric layer structure at least partially surrounding the magnetic element,
- wherein a first main surface of the magnetic element is flush with a respective first main surface of the dielectric layer structure,
- wherein an opposed main surface of the magnetic element contacts a respective opposed main surface of the stack,
- wherein the magnetic element includes a plurality of gaps,
- wherein the embedded inductive element is in the gaps,
- wherein the magnetic element comprises:
- a magnetic matrix, and
- wherein the embedded inductive element is an electrically conductive structure that is at least partially embedded in the magnetic matrix,
- wherein the dielectric layer structure comprises a shift pattern at an interface between a first dielectric layer structure and a second dielectric layer structure,
- wherein the shift pattern comprises at least one of the group which consists of an alignment shift, a smearing, a tapering of a dielectric layer structure sidewall being in contact with a sidewall of the magnetic element,
- wherein the magnetic element comprises a first magnetic element and a second magnetic element,
- wherein the second magnetic element is placed directly on the first magnetic element,
- wherein the first dielectric layer structure at least partially surrounds the first magnetic element, and the second dielectric layer structure at least partially surrounds the second magnetic element.
13 more elements
A method, comprising:
- using photolithography to provide cavities in a dielectric layer structure of a component carrier, the component carrier having a stack with at least one electrically conductive layer structure and at least one electrically insulating layer structure;
- embedding a magnetic element in the component carrier, and
- arranging an electrically conductive structure that is at least partially embedded in the magnetic matrix,
- wherein an upper main surface of the magnetic element is flush with an upper main surface of the dielectric layer structure,
- wherein the dielectric layer structure at least partially surrounds the magnetic element;
- wherein the magnetic element comprises a plurality of gaps within the magnetic element,
- wherein the electrically conductive structure is in the gaps,
- wherein a lower main surface of the magnetic element contacts an upper main surface of the stack,
- wherein the dielectric layer structure comprises a shift pattern at an interface between a first dielectric layer structure and a second dielectric layer structure,
- wherein the shift pattern comprises at least one of the group which consists of an alignment shift, a smearing, a tapering of a dielectric layer structure sidewall being in contact with a sidewall of the magnetic element,
- wherein the magnetic element comprises a first magnetic element and a second magnetic element,
- wherein the second magnetic element is placed directly on the first magnetic element,
- wherein the first dielectric layer structure at least partially surrounds the first magnetic element, and the second dielectric layer structure at least partially surrounds the second magnetic element,
- wherein a seed layer is provided to cover the respective bottoms of the plurality of gaps and an inductive element is provided by the electrically conductive structure which is formed in the gaps by electroplating.
11 more elements
Dependencies are inferred from the claim text.