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US 12,278,269 B2Granted
Bipolar transistor with stepped emitter
AssigneeGlobalFoundries U.S. Inc.
InventorsUppili S. Raghunathan, Vibhor Jain, Qizhi Liu, Yves T. Ngu, Ajay Raman, Rajendran Krishnasamy, Alvin J. Joseph
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with a stepped emitter and methods of manufacture. The structure includes: a collector; a base over the collector; and an emitter over the base, the emitter comprising at least one stepped feature over the base.
Claims20
A structure comprising:
- a collector;
- a base over the collector;
- an emitter over the base, the emitter comprising at least one stepped feature over the base, wherein the at least one stepped feature comprises a first raised mesa with a first width dimension and a second raised mesa over the first raised mesa and with a second width dimension smaller than the first width dimension of the first raised mesa;
- and
- a sidewall spacer on sidewalls of the first raised mesa, the sidewall spacer having a height extending to a height of the second raised mesa and the sidewall spacer being remote from a sidewall of the second mesa.
2 more elements
A structure comprising:
- a semiconductor substrate;
- a collector in the semiconductor substrate;
- shallow trench isolation structures isolating the collector;
- a base comprising an intrinsic base over the collector and an extrinsic base adjacent to the intrinsic base;
- an emitter over the intrinsic base, the emitter comprising at least one raised mesa structure comprising lower mesa and at least one upper mesa and a stepped feature on sides therebetween, the lower mesa comprising a width dimension that is large than a width dimension of the at least one upper mesa;
- and
- a spacer separating the emitter from the base and being provided only on sidewalls of the lower mesa and being remote from a sidewall of the upper mesa.
4 more elements
A method comprising:
- forming a collector;
- forming a base over the collector;
- forming an emitter over the base, the emitter comprising at least one stepped feature over the base, wherein the at least one stepped feature comprises a first raised mesa with a first width dimension and a second raised mesa over the first raised mesa and with a second width dimension smaller than the first width dimension of the first raised mesa;
- and
- forming a sidewall spacer on sidewalls of the first raised mesa, the sidewall spacer having a height extending to a height of the second raised mesa and the sidewall spacer being remote from a sidewall of the second mesa.
2 more elements
Dependencies are inferred from the claim text.