Systems and methods for shielded inductive devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsFeng Wei Kuo, Chewn-Pu Jou, Huan-Neng Chen, Lan-Chou Cho, Robert Bogdan Staszewski
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Abstract
In an embodiment, a circuit includes: a transformer defining an inductive footprint within a first layer; a grounded shield bounded by the inductive footprint within a second layer separate from the first layer; and a circuit component bounded by the inductive footprint within a third layer separate from the second layer, wherein: the circuit component is coupled with the transformer through the second layer, and the third layer is separated from the first layer by the second layer.
Claims20
An integrated circuit, comprising:
- a transformer defining an inductive footprint formed within a first metallization layer of the integrated circuit;
- a grounded shield formed within a second metallization layer of the integrated circuit separate from the first metallization layer;
- and
- a circuit component formed within a third metallization layer of the integrated circuit separate from the second metallization layer, wherein:
- the circuit component is coupled with the transformer through the second metallization layer,
- the third metallization layer is separated from the first layer by the second metallization layer,
- the circuit component is laterally surrounded by winding structures of the transformer, and
- the grounded shield is laterally bounded within the inductive footprint.
An integrated circuit, comprising:
- an inductor defining an inductive footprint within a first metallization layer of the integrated circuit;
- a grounded shield formed within a second metallization layer of the integrated circuit separate from the first layer;
- and
- a circuit component laterally bounded by the inductive footprint so as to be surrounded by an outer perimeter of the inductive footprint, wherein the circuit component is formed within a third metallization layer of the integrated circuit separate from the second metallization layer, wherein:
- the circuit component is coupled with the inductor,
- the third metallization layer is separated from the first metallization layer by the second metallization layer,
- the circuit component is laterally surrounded by winding structures of the inductor, and
- the grounded shield is laterally bounded within the inductive footprint.
An integrated circuit, comprising:
- an inductor defining an inductive footprint within a first metallization layer of the integrated circuit;
- a grounded shield formed within a second metallization layer of the integrated circuit separate from the first metallization layer;
- and
- a circuit component laterally bounded by the inductive footprint so as to be surrounded by an outer perimeter of the inductive footprint, wherein the circuit component is formed within a third metallization layer of the integrated circuit separate from the second metallization layer, wherein:
- the circuit component is coupled with the inductor,
- the third metallization layer is separated from the first metallization layer by the second metallization layer,
- the circuit component is laterally surrounded by winding structures of the inductor, and
- the grounded shield is laterally bounded within the inductive footprint.
Dependencies are inferred from the claim text.