Memory structure and method for operating the same
AssigneeMacronix International Co., Ltd.
InventorsWei-Chen Chen, Hang-Ting Lue
Life of this patent
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AssigneeMacronix International Co., Ltd.
InventorsWei-Chen Chen, Hang-Ting Lue
Estimating the term…
A memory structure and methods for operating memory structures are provided. The memory structure includes a first, a second and a third gate structures disposed along a first direction and separated from each other, channel bodies having first ends and second ends, source regions separated from each other, having first conductivity types and connected to the first ends of the channel bodies respectively, drain regions separated from each other, having second conductivity types and connected to the second ends of the channel bodies respectively, and first side plugs disposed along a second direction, extending along a third direction, and electrically connected to the source regions and the channel bodies. The first gate structure includes island structures disposed along the second direction and extending along the third direction.
A memory structure, comprising:
A method for operating a memory structure, comprising:
A method for operating a memory structure, comprising:
Dependencies are inferred from the claim text.