Manufacturing a semiconductor structure
AssigneeSmart Photonics Holding B.V.
InventorMaria Johanna Helena Jochem
Life of this patent
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Abstract
A method of manufacturing a semiconductor structure comprising: depositing a first layer in contact with a first surface area of a substrate; depositing a second layer in contact with a second surface area of the substrate, the second surface area substantially co-planar with and outwards of the first surface area; depositing a third layer in contact with the first layer and the second layer; removing a portion of the third layer to expose a portion of the first layer; and removing at least a portion of the first layer to create a cavity between the substrate, the second layer and the third layer.
Claims20
A method of manufacturing a semiconductor structure, comprising:
- (i) depositing a first layer in contact with a first surface area of a substrate, the substrate being of a first semiconductor material and the first layer being of a second semiconductor material;
- (ii) depositing a second layer in contact with a second surface area of the substrate, the second surface area substantially co-planar with and outwards of the first surface area, and the second layer being of the first semiconductor material or a third semiconductor material;
- (iii) depositing a third layer in contact with the first layer and the second layer, the third layer being of the first semiconductor material or the third semiconductor material or a fourth semiconductor material;
- (iv) removing a portion of the third layer to expose a portion of the first layer;
- and
- (v) removing at least a portion of the first layer to create a cavity between the substrate, the second layer and the third layer.
Dependencies are inferred from the claim text.