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US 12,276,043 B2Granted
Silicon carbide ingot and method of fabricating the same
AssigneeGlobalWafers Co., Ltd.
InventorChing-Shan Lin
Life of this patent
Estimating the term…
Abstract
A silicon carbide ingot is provided, which includes a seed end, and a dome end opposite to the seed end. In the silicon carbide ingot, a ratio of the vanadium concentration to the nitrogen concentration at the seed end is in a range of 5:1 to 11:1, and a ratio of the vanadium concentration to the nitrogen concentration at the dome end is in a range of 2:1 to 11:1.
Claims6
A silicon carbide ingot, comprising:
- a seed end and a dome end opposite to the seed end, wherein a ratio of vanadium concentration to nitrogen concentration at the seed end is in a range of 5:1 to 11:1, and a ratio of the vanadium concentration to the nitrogen concentration at the dome end is in a range of 2:1 to 11:1, and wherein
- the vanadium concentration at the seed end is within a range of 6.3*1017 atoms/cm3 to 9.9*1017 atoms/cm3, and
- the vanadium concentration at the dome end is within a range of 1017 atoms/cm3 to 5*1017 atoms/cm3.
Dependencies are inferred from the claim text.