Modification of stress response and adhesion behavior of dielectric through tuning of mechanical properties
AssigneeFlexenable Technology Limited
InventorsRashmi Sachin Bhintade, Tomas Backlund
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Abstract
The disclosed subject matter relates to a dielectric stack that includes a dielectric layer formed from a dielectric material that includes one or more constituent components each having a Tg value of 70° C. or lower and that is annealed at a temperature exceeding the highest Tg value of the one or more constituent components.
Claims14
A dielectric stack comprising a dielectric layer, said dielectric layer comprising a dielectric material, said dielectric material comprising one or more constituent components each having a glass transition temperature (Tg) value of 70° C. or lower,
- and wherein:
- a vapor deposited dielectric is disposed on the dielectric layer;
- and
- the dielectric material includes:
- poly(vinyltoluene-co-alpha-methylstyrene);
- and/or
- a cyclic olefin polymer.
A process for preparing a dielectric stack, the process comprising the steps of:
- (i) preparing a dielectric material comprising one or more constituent components each having a Tg value of 70° C. or lower;
- (ii) applying the dielectric material to a polymeric organic semiconductor layer;
- (iii) forming a dielectric layer on the polymeric organic semiconductor by annealing the dielectric material at a temperature exceeding the Tg value of the constituent components;
- and (iv) applying a vapor deposited dielectric to the dielectric layer,
- wherein the dielectric material is applied to the polymeric organic semiconductor layer in sufficient quantity such that the dielectric layer has a thickness of 200 nm or greater after annealing;
- and
- the dielectric material includes poly (vinyltoluene-co-alpha-methylstyrene) and/or a cyclic olefin polymer.
Dependencies are inferred from the claim text.