Method of enhancing contrast while imaging high aspect ratio structures in electron microscopy
AssigneeApplied Materials, Inc.
InventorsGeetika Bajaj, Prerna Sonthalia Goradia, Robert J. Visser
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Abstract
The enclosed disclosure relates to a method and apparatus for depositing functionalized nanoparticles within a semiconductor structure in order to create a nano-layer capable of enhancing imaging and contrast, The semiconductor structure can include any type of VNAND structure or 3D structure, The nanoparticles are formed in high-aspect ratio trenches of the structure and form a nano-layer. The functionalized nanoparticles comprise synthesized nanoparticles as well as organic molecules. The organic molecules are chosen to selectively bind to certain nanoparticles and surface materials.
Claims20
A method for depositing a layer of nanoparticles or a nano-layer to a semiconductor device, comprising:
- modifying synthesized nanoparticles with an organic molecule, the organic molecule comprising:
- a head group that binds to a surface of the synthesized nanoparticle;
- and
- a tail group;
- and
- depositing the synthesized nanoparticles onto at least part of a semiconductor structure, wherein the tail group binds the synthesized nanoparticles to at least part of the semiconductor structure and forms a nano-layer.
A method for depositing a nano-layer in a semiconductor device, comprising:
- modifying synthesized nanoparticles with an organic molecule, the organic molecule comprising:
- a head group that binds to a surface of the synthesized nanoparticle;
- and
- a tail group;
- and
- depositing the synthesized nanoparticles into at least part of a high-aspect ratio trench structure, wherein a surface of the high-aspect ratio trench structure comprises hydrogen oxide molecules, and wherein the tail group binds the synthesized nanoparticles to at least part of the high-aspect ratio trench structure.
A semiconductor device, comprising:
- a high-aspect ratio trench having a depth and a width, a ratio of the depth to the width being greater than about 10:1;
- a nano-layer disposed in at least a portion of the high-aspect ratio trench, the nano-layer comprising synthesized nanoparticles, the synthesized nanoparticles comprising an element with an atomic number greater than 40;
- and
- an organic molecule, the organic molecule bonded to the high-aspect ratio trench via a tail group and the synthesized nanoparticle via a head group.
Dependencies are inferred from the claim text.