Ionization detector and detection method
AssigneeKETEK GmbH Halbleiter- und Reinraumtechnik
InventorsMichael Bachmann, Andreas Schels, Florian Herdl, Stefan Zimmermann, Simon Edler, Erik Bunert
Life of this patent
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Abstract
In an embodiment an ionization detector includes a gate-insulator-substrate electron-emission structure (GIS-EE) configured to emit low-energy electrons, a sample chamber configured for at least one gas to be detected, the sample chamber being adjacent to the GIS-EE and a measuring unit configured to detect and/or select charged particles, wherein the charged particles are due to the emitted electrons and/or comprise the emitted electrons.
Claims19
An ionization detector comprising:
- a gate-insulator-substrate electron-emission structure (GIS-EE) configured to emit low-energy electrons;
- a sample chamber configured for at least one gas to be detected, the sample chamber being adjacent to the GIS-EE;
- and
- a measuring unit configured to detect and/or select charged particles, wherein the charged particles are due to the emitted electrons and/or comprise the emitted electrons,
- wherein the GIS-EE comprises:
- an electrically conductive substrate,
- a transfer layer of a material with a band gap of at least 4 eV located on the substrate,
- a gate electrode of a further electrically conductive material located directly on the transfer layer,
- a first electrical connection structure located on the substrate, and
- a second electrical connection structure located on the gate electrode.
An ionization detector comprising:
- a gate-insulator-substrate electron-emission structure (GIS-EE) configured to emit low-energy electrons;
- a sample chamber configured for at least one gas to be detected, the sample chamber being adjacent to the GIS-EE;
- and
- a measuring unit configured to detect and/or select charged particles, wherein the charged particles are due to the emitted electrons and/or comprise the emitted electrons,
- wherein the GIS-EE comprises:
- an electrically conductive substrate,
- a transfer layer of a material with a band gap of at least 4 eV located on the substrate,
- a gate electrode of a further electrically conductive material located directly on the transfer layer,
- a first electrical connection structure arranged on the substrate, and
- a second electrical connection structure arranged on the gate electrode, and
- wherein at least one of the GIS-EE comprises a plurality of lamellae, each configured to emit the electrons, or
- wherein the GIS-EE is traversed by a plurality of holes and the sample chamber comprises the holes.
An ionization detector comprising:
- a gate-insulator-substrate electron-emission structure (GIS-EE) configured to emit low-energy electrons;
- a sample chamber configured for at least one gas to be detected, the sample chamber being adjacent to the GIS-EE;
- a measuring unit configured to detect and/or select charged particles, wherein the charged particles are due to the emitted electrons and/or comprise the emitted electrons;
- and
- an electron ionization detector,
- wherein the GIS-EE is configured to vary an energy of the emitted electrons.
An ionization detector comprising:
- a gate-insulator-substrate electron-emission structure (GIS-EE) configured to emit low-energy electrons;
- a sample chamber configured for at least one gas to be detected, the sample chamber being adjacent to the GIS-EE;
- and
- a measuring unit configured to detect and/or select charged particles,
- wherein the charged particles are due to the emitted electrons and/or comprise the emitted electrons, and
- wherein the GIS-EE further comprises a further gate-insulator layer sequence to adjust an energy of the emitted electrons by an additional potential.
Dependencies are inferred from the claim text.