Coreless electronic substrates having embedded inductors
AssigneeIntel Corporation
InventorsSrinivas Pietambaram, Pooya Tadayon, Kristof Darmawikarta, Tarek Ibrahim, Prithwish Chatterjee
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Abstract
An inductor can be formed in a coreless electronic substrate from magnetic materials and/or fabrication processes that do not result in the magnetic materials leaching into plating and/or etching solutions/chemistries, and results in a unique inductor structure. This may be achieved by forming the inductors from magnetic ferrites. The formation of the electronic substrates may also include process sequences that prevent exposure of the magnetic ferrites to the plating and/or etching solutions/chemistries.
Claims21
An apparatus, comprising:
- a plurality of metallization levels with one or more layers of dielectric material between the levels, wherein each of the metallization levels comprises a plurality of coplanar metallization traces;
- a first high-permeability magnetic ferrite element within the dielectric material, the first high-permeability magnetic ferrite element in direct contact with a first surface of a coiled one of the metallization traces in a first of the metallization levels;
- and
- a second high-permeability magnetic ferrite element within the dielectric material, the second high-permeability magnetic ferrite element in direct contact with a second surface of the coiled one of the metallization traces, opposite the first surface, and in direct contact with a portion of the first high-permeability magnetic ferrite element extending between turns of the coiled one of the metallization traces.
An apparatus, comprising:
- a coreless electronic substrate, wherein the coreless electronic substrate comprises a planar inductor coil between a first dielectric material layer and a second dielectric material layer, and wherein:
- a first high-permeability magnetic ferrite element is between, and in contact with, both the first dielectric material layer and the inductor coil;
- and
- a second high-permeability magnetic ferrite element is between, and in contact with, both the second dielectric material layer and the inductor coil, and is in direct contact with a portion of the first high-permeability magnetic ferrite element between turns of the inductor coil.
Dependencies are inferred from the claim text.