Memory device configured to reduce degradation of adjacent word lines and operating method thereof

An operating method of a memory device comprising:

• acquiring an address of a first bad word line in a block;
• sending first data via the first bad word line;
• sending second data via a word line adjacent to the first bad word line;
• and
• designating the first bad word line as a prohibited word line;
• and
• designating the word line adjacent to the first bad word line as a read-only word line.

A memory system comprising:

• a memory device including a plurality of memory cells respectively connected to a plurality of word lines;
• and
• a memory controller configured to
• acquire an address of a first bad word line in the plurality of word lines,
• detect whether word lines adjacent to the first bad word line are bad based on the address of the first bad word line, the word lines adjacent to the first bad word line included in the plurality of word lines,
• designate a first word line among the word lines adjacent to the first bad word line as a prohibited word line, the first word line being among the word lines adjacent to the first bad word line, the first word line being detected as a second bad word line, and
• record first data in a second word line detected as a normal word line among the word lines adjacent to the first bad word line using a first voltage that is lower than a second voltage used to program normal word lines, the normal word lines being one or more of the plurality of word lines excluding the word lines adjacent to the first bad word line.