Heterogeneous integration and electro-optic modulation of III-nitride photonics on a silicon photonic platform

A method of forming a photonic integrated circuit, the method comprising:

• forming a silicon dioxide layer on a first substrate;
• forming a silicon nitride waveguide on the of silicon dioxide layer;
• forming an electro-optic modulator including a III-nitride waveguide structure on a second substrate;
• bonding the electro-optic modulator to the silicon nitride waveguide with a III-nitride slab such that the silicon dioxide layer is beneath the III-nitride waveguide structure, wherein the III-nitride slab is supported above the silicon dioxide layer by the silicon nitride waveguide and by silicon nitride support layers disposed on the silicon dioxide layer, wherein the silicon nitride support layers are separated laterally from the silicon nitride waveguide in a direction perpendicular to a direction of light passage through the silicon nitride waveguide and the III-nitride waveguide;
• and
• removing the second substrate.