Light receiving element, distance measurement module, and electronic device

A light receiving element, comprising:

• a pixel, including:
• a first charge holding unit and a second charge holding unit each of which holds an electric charge generated by a photodiode;
• a first transfer transistor that transfers the electric charge to the first charge holding unit, wherein the first transfer transistor includes a vertical transistor including a vertical gate electrode portion;
• a second transfer transistor that transfers the electric charge to the second charge holding unit, wherein the second transfer transistor includes a vertical transistor including a vertical gate electrode portion;
• a first additional capacitance that stores the electric charge;
• a first connection transistor that connects the first additional capacitance to the first charge holding unit;
• a second additional capacitance that stores the electric charge;
• and
• a second connection transistor that connects the second additional capacitance to the second charge holding unit.

An electronic device, comprising:

• a light receiving element, including:
• a pixel at least including:
• a first charge holding unit and a second charge holding unit, each of which holds an electric charge generated by a photodiode;
• a first transfer transistor that transfers the electric charge to the first charge holding unit, wherein the first transfer transistor includes a vertical transistor including a vertical gate electrode portion, and wherein a planar shape of the vertical gate electrode portion of the vertical transistor of the first transfer transistor is formed in an elongated shape having a second width in a direction orthogonal to a gate width direction longer than a first width in the gate width direction;
• and
• a second transfer transistor that transfers the electric charge to the second charge holding unit, wherein the second transfer transistor includes a vertical transistor including a vertical gate electrode portion, and
• wherein a planar shape of the vertical gate electrode portion of the vertical transistor of the second transfer transistor is formed in an elongated shape having a second width in a direction orthogonal to a gate width direction longer than a first width in the gate width direction.