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US 12,270,121 B2Granted
Composition and method for fabrication of nickel interconnects
AssigneeMacDermid Enthone Inc.
InventorsEric Yakobson, Shaopeng Sun, Elie Najjar, Thomas Richardson, Vincent Paneccasio, Jr., Wenbo Shao, Kyle Whitten
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Abstract
A nickel electrodeposition composition for via fill or barrier nickel interconnect fabrication comprising: (a) a source of nickel ions; (b) one or more polarizing additives; and (c) one or more depolarizing additives. The nickel electrodeposition composition may include various additives, including suitable acids, surfactants, buffers, and/or stress modifiers to produce bottom-up filling of vias and trenches.
Claims19
A method of filling vias in microelectronic devices by bottom up filling with nickel or an alloy of nickel, the method comprising the steps of:
- contacting a substrate with an electrodeposition composition, wherein the electrodeposition composition comprises:
- a. a source of nickel ions;
- b. one or more polarizing additives, wherein the one or more polarizing additives are selected from the group consisting of alkyl betaines, cyclic betaines, aryl betaines, heterocyclic betaines, hydroxylated betaines, alkoxylated alkenols, and combinations thereof;
- c. one or more depolarizing additives, wherein the one or more depolarizing additives comprise sulfimides, sulfonates, sulfates, or combinations thereof;
- and
- d. optionally, one or more alloying metals selected from the group consisting of iron, cobalt, molybdenum, rhenium, and combinations thereof,
- wherein the vias are contacted with the electrodeposition composition for a period of time sufficient to completely fill the vias by bottom up filling of the vias;
- wherein a difference of additive mass transport and adsorption rate between a field and a bottom of the vias results in bottom up fill of the vias, wherein a high cathodic polarization due to a higher electrode rotation rate is indicative of field deposition rate and a lower cathodic polarization at a lower electrode rotation rate is indicative of the deposition rate at the bottom of the vias and a larger difference between the field deposition rate and the deposition rate at the bottom of the vias results in complete bottom up fill of the vias.
5 more elements
A method of filling vias in microelectronic devices by bottom up filling, the method comprising the steps of:
- contacting a substrate with an electrodeposition composition, wherein the electrodeposition composition consists essentially of:
- a. a source of nickel ions;
- b. 100 to 500 ppm of one or more polarizing additives, wherein the one or more polarizing additives are selected from the group consisting of alkyl betaines, cyclic betaines, aryl betaines, heterocyclic betaines, hydroxylated betaines, alkoxylated alkenols, and combinations thereof;
- c. 150 mg/L to 750 mg/L of one or more depolarizing additives, wherein the one or more depolarizing additives comprise sulfimides, sulfonates, sulfates, or combinations thereof;
- d. at least one acid;
- and
- e. one or more of at least one surfactant, at least one buffer, and at least one stress modifier,
- wherein the vias are contacted with the electrodeposition composition for a period of time sufficient to completely fill the vias by bottom up filling of the vias;
- wherein a difference of additive mass transport and adsorption rate between a field and a bottom of the vias results in bottom up fill of the vias, wherein a high cathodic polarization due to a higher electrode rotation rate is indicative of field deposition rate and a lower cathodic polarization at a lower electrode rotation rate is indicative of the deposition rate at the bottom of the vias and a larger difference between the field deposition rate and the deposition rate at the bottom of the vias results in complete bottom up fill of the vias.
6 more elements
A method of filling vias in microelectronic devices by bottom up filling, the method comprising the steps of:
- contacting a substrate with an electrodeposition composition, wherein the electrodeposition composition comprises:
- a. a source of nickel ions;
- b. 100 to 500 ppm of one or more polarizing additives, wherein the one or more polarizing additives are selected from the group consisting of alkyl betaines, cyclic betaines, aryl betaines, heterocyclic betaines, hydroxylated betaines, alkoxylated alkenols, and combinations thereof;
- c. 150 mg/L to 750 mg/L of one or more depolarizing additives, wherein the one or more depolarizing additives comprise sulfimides, sulfonates, sulfates, or combinations thereof;
- and
- d. 50 to 100 g/L of a stress modifier, wherein the stress modifier is selected from the group consisting of bromides, sulfonate, salicylates, sulfosalicylates, and sulfonimides;
- wherein the vias are contacted with the electrodeposition composition for a period of time sufficient to completely fill the vias by bottom up filling of the vias;
- wherein a difference of additive mass transport and adsorption rate between a field and a bottom of the vias results in bottom up fill of the vias, wherein a high cathodic polarization due to a higher electrode rotation rate is indicative of field deposition rate and a lower cathodic polarization at a lower electrode rotation rate is indicative of the deposition rate at the bottom of the vias and a larger difference between the field deposition rate and the deposition rate at the bottom of the vias results in complete bottom up fill of the vias.
5 more elements
Dependencies are inferred from the claim text.