Method for fabricating imprint master, the imprint master, imprint and article

A method for fabricating an imprint master comprising:

• a first forming step of forming micro-protrusion-and-recess structures having a first average pitch on one surface of a substrate;
• and
• a second forming step of forming main recesses or main protrusions having a second average pitch larger than the first average pitch on the one surface of the substrate having the micro-protrusion-and-recess structures formed thereon, in a manner maintaining a shape of at least a portion of the micro-protrusion-and-recess structures in the main recesses or the main protrusions while the main recesses or the main protrusions are being formed, wherein
• the first forming step comprising:
• a first deposition step of depositing an inorganic resist layer on the one surface of the substrate;
• a first exposure step of exposing the inorganic resist layer by thermal lithography to form a latent image corresponding to the micro-protrusion-and-recess structure;
• a first developing step of developing the inorganic resist layer having the latent image formed thereon;
• and
• a first etching step of etching the substrate using the inorganic resist layer having been developed as a first etching mask to form the micro-protrusion-and-recess structure, and
• the second forming step comprising:
• a second deposition step of depositing an organic resist layer on the one surface of the substrate having the micro-protrusion-and-recess structure formed thereon;
• a second exposure step of exposing the organic resist layer by optical lithography to form a latent image corresponding to the main recess or the main protrusion;
• a second developing step of developing the organic resist layer having the latent image formed thereon;
• and
• a second etching step of etching the substrate using the organic resist layer having been developed as a second etching mask to form the main recess or the main protrusion, wherein
• in the second etching step, an etching rate of the organic resist layer is greater than an etching rate of the substrate, and the substrate is etched until micro-protrusion-and-recess structures other than the portions corresponding to the main recesses or the main protrusions are removed.