Dielectric protection layer configured to increase performance of mems device

A method for forming an integrated chip, the method comprising:

• forming a stack of conductive layers over a semiconductor substrate, wherein a cavity electrode comprises a segment of the stack of conductive layers;
• depositing a dielectric protection layer on the cavity electrode, wherein the dielectric protection layer directly contacts a top surface of the cavity electrode, wherein forming the cavity electrode comprises etching the stack of conductive layers while the dielectric protection layer is disposed on the stack of conductive layers, wherein outer sidewalls of the cavity electrode are aligned with outer sidewalls of the dielectric protection layer;
• forming an upper dielectric structure over the dielectric protection layer, wherein a dielectric constant of the upper dielectric structure is less than a dielectric constant of the dielectric protection layer;
• etching the upper dielectric structure to form a cavity in the upper dielectric structure over the cavity electrode, wherein the dielectric protection layer remains on the top surface of the cavity electrode after etching the upper dielectric structure to form the cavity;
• and
• bonding a microelectromechanical system (MEMS) substrate to the upper dielectric structure, wherein the MEMS substrate comprises a movable membrane directly over the cavity electrode.

A method for forming an integrated chip, the method comprising:

• forming a stack of conductive layers over a semiconductor substrate, wherein a cavity electrode comprises a segment of the stack of conductive layers;
• depositing a dielectric protection layer on the cavity electrode, wherein the dielectric protection layer directly contacts a top surface of the cavity electrode, wherein the dielectric protection layer is deposited after forming the cavity electrode and along opposing sidewalls of the cavity electrode, wherein a bottom surface of the dielectric protection layer is aligned with a bottom surface of the cavity electrode;
• forming an upper dielectric structure over the dielectric protection layer, wherein a dielectric constant of the upper dielectric structure is less than a dielectric constant of the dielectric protection layer;
• etching the upper dielectric structure to form a cavity in the upper dielectric structure over the cavity electrode, wherein the dielectric protection layer remains on the top surface of the cavity electrode after etching the upper dielectric structure to form the cavity;
• and
• bonding a microelectromechanical system (MEMS) substrate to the upper dielectric structure, wherein the MEMS substrate comprises a movable membrane directly over the cavity electrode.