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US 12,268,032 B2Granted
Electrostatic protection circuit and semiconductor device
AssigneeAblic Inc.
InventorTsutomu Tomioka
Life of this patent
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Abstract
An electrostatic protection circuit and a semiconductor device include: a first diode whose anode is connected to a signal terminal; a second diode whose cathode is connected to a cathode of the first diode and whose anode is connected to a GND terminal; and a depletion type MOS transistor connected in parallel with the first diode.
Claims4
An electrostatic protection circuit configured to protect a signal terminal of an internal circuit of a semiconductor device, comprising:
- a first diode having an anode connected to the signal terminal;
- a second diode having a cathode connected to a cathode of the first diode and an anode connected to a GND terminal;
- a depletion type MOS transistor connected in parallel with the first diode, wherein the depletion type MOS transistor is an nMOS transistor having a gate, a source, and a bulk connected to the internal circuit, and having a drain connected to the cathode of the first diode;
- and
- a first resistor connected between the anode of the first diode and the gate of the nMOS transistor.
2 more elements
Dependencies are inferred from the claim text.