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US 12,266,733 B2Granted
Methods for growing doped cesium lead halides
AssigneeNorthwestern University
InventorsMercouri G. Kanatzidis, Yihui He
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Abstract
Methods and devices for detecting incident radiation are provided. The methods and devices use high quality single-crystals of photoactive semiconductor compounds in combination with metal anodes and metal cathodes that provide for enhanced photodetector performance.
Claims9
A method of growing a doped CsPbX3 single crystal, the method comprising:
- forming a melt comprising CsX, PbX2, where X is Br or Cl, and a doping species comprising a dopant element from Group 13 or Group 17 of the periodic table;
- and
- growing crystalline doped CsPbX3 from the melt via vertical Bridgman growth.
A method of growing a doped CsPbX3 single crystal, the method comprising:
- forming a melt comprising CsX, PbX2, where X is Br or Cl, and a doping species comprising Se;
- and
- growing crystalline doped CsPbX3 from the melt via vertical Bridgman growth.
A method of growing a doped CsPbX3 single crystal, the method comprising:
- forming a melt comprising CsX, PbX2, where X is Br or Cl, and a doping species comprising CsSnBr3;
- and
- growing crystalline doped CsPbX3 from the melt via vertical Bridgman growth.
Dependencies are inferred from the claim text.