Voltage-controlled switching device with resistive path
AssigneeInfineon Technologies Dresden GmbH
InventorsChristian Philipp Sandow, Anton Mauder, Franz-Josef Niedernostheide
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Abstract
A voltage-controlled switching device includes a drain/drift structure formed in a semiconductor portion with a lateral cross-sectional area AQ, a source/emitter terminal, and an emitter channel region between the drain/drift structure and the source/emitter terminal. A resistive path electrically connects the source/emitter terminal and the emitter channel region. The resistive path has an electrical resistance of at least 0.1 mΩ*cm2/AQ.
Claims19
A voltage-controlled switching device, comprising:
- a drain/drift structure formed in a semiconductor portion with a lateral cross-sectional area AQ;
- a source/emitter terminal;
- and
- an emitter channel region between the drain/drift structure and the source/emitter terminal,
- wherein a resistive path electrically connects the source/emitter terminal and the emitter channel region,
- wherein the resistive path comprises a resistive structure,
- wherein the resistive structure is formed between the source/emitter terminal and a semiconducting section,
- wherein an electrical resistance of the resistive structure is at least 0.1 mΩ*cm2/AQ.
A voltage-controlled switching device, comprising:
- a drain/drift structure formed in a semiconductor portion;
- a source/emitter terminal;
- an emitter channel region between the drain/drift structure and the source/emitter terminal, wherein the emitter channel region and the drain/drift structure form a first semiconductor junction;
- and
- a gate electrode configured to temporarily induce a charge carrier channel in a gated portion of the emitter channel region,
- wherein in the gated portion, a mean minority charge carrier mobility at a temperature of 25° C. is at most 1000 cm2/(Vs) in case the minority charge carriers are electrons and at most 400 cm2/(Vs) in case the minority charge carriers are holes.
A switching assembly, comprising:
- a first load wiring structure;
- a voltage-controlled switching device comprising a drain/drift structure formed in a semiconductor portion with a lateral cross-sectional area AQ, an emitter channel region formed in the semiconductor portion, and a source/emitter terminal, wherein the source/emitter terminal and the emitter channel region are electrically connected, and wherein the emitter channel region is formed between the source/emitter terminal and the drain/drift structure;
- and
- a resistor element electrically connected between the source/emitter terminal and the first load wiring structure,
- wherein an electrical resistance of the resistor element is at least 0.1 mΩ*cm2/AQ.
A voltage-controlled switching device, comprising:
- a drain/drift structure formed in a semiconductor portion with a lateral cross-sectional area AQ;
- a source/emitter terminal;
- an emitter channel region between the drain/drift structure and the source/emitter terminal;
- and
- a gate electrode configured to temporarily induce a charge carrier channel in a gated portion of the emitter channel region,
- wherein a resistive path electrically connects the source/emitter terminal and the emitter channel region,
- wherein the resistive path includes a source-side structure between the source/emitter terminal and the gated portion of the emitter channel region,
- wherein the source-side structure is formed in the semiconductor portion, and
- wherein an electrical resistance of the source-side structure is at least 0.1 mΩ*cm2/AQ.
Dependencies are inferred from the claim text.